The silicon on diamond structure by low-temperature bonding technique

Duangchan, Sethavut; Uchikawa, Yusuke; Koishikawa, Yusuke; Baba, Akiyoshi; Nakagawa, Kentaro; Matsumoto, Satoshi; Hasegawa, Masataka; Nishizawa, Satoshi

doi:10.1109/ectc.2015.7159590

Cited by 5 publications

(4 citation statements)

References 23 publications

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“…The hydrophilic bonding primally consists three steps: hydroxyl-termination of the surfaces; contacting the surfaces with each other; and annealing the contacted substrates for bonding formation. While several researchers have demonstrated the hydrophilic bonding of an adhesion layer deposited on diamond [17], [18], there is very little published research on the hydrophilic bonding of diamond surface. The main obstacle is that the OHtermination technique that is suitable for direct bonding has not been developed.…”

Section: Introductionmentioning

confidence: 99%

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

Matsumae

Kurashima

Umezawa

et al. 2020

MSF

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A monocrystalline diamond substrate was bonded with a Si substrate employing a direct bonding technique. The diamond and Si surfaces were functionalized with hydroxyl (–OH) groups and subsequently bonded by the thermal dehydration reaction across the bonding interface. When a diamond (111) surface was treated with a mixture of H2SO4 and H2O2, it generated an atomic bond of C–O–Si with an oxygen-plasma-irradiated Si substrate. The bonding technique of diamond using the H2SO4/H2O2 mixture is expected to contribute to the future integration of diamond and semiconductor substrates because it allows low-temperature bonding in atmospheric air with negligible crystallinity damage.

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Section: Introductionmentioning

confidence: 99%

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

Matsumae

Kurashima

Umezawa

et al. 2020

MSF

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“…31) We have proposed and demonstrated the fabrication of the SOD substrate using NCD as a buried layer by a surface activation bonding method. 32) For successful fabrication, the following two factors are important in the bonding process:…”

Section: Introductionmentioning

confidence: 99%

Fabrication of silicon-on-diamond substrate with an ultrathin SiO₂ bonding layer

Nagata

Shirahama

Duangchan

et al. 2018

Jpn. J. Appl. Phys.

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We proposed and demonstrated a sputter etching method to prepare both a flat surface (root-mean-square surface roughness of approximately 0.2–0.3 nm) and an ultrathin SiO2 bonding layer at an accuracy of approximately 5 nm in thickness to fabricate a silicon-on-diamond substrate (SOD). We also investigated a plasma activation method on a SiO2 surface using various gases. We found that O2 plasma activation is more suitable for the bonding between SiO2 and Si than N2 or Ar plasma activation. We speculate that the concentration of hydroxyl groups on the SiO2 surface was increased by O2 plasma activation. We fabricated the SOD substrate with an ultrathin (15 nm in thickness) SiO2 bonding layer using the sputter etching and O2 plasma activation methods.

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“…[12][13][14][15][16][17][18] In addition, we also report a fabrication process based on a lowtemperature (<200 °C) wafer direct bonding process. 19) Recently, three-dimensional (3D) stacking power-SoC has attracted attention because it can a realize much higher density integration and a heterogeneous integration in various devices such as Si LSI and high-frequency and highefficiency GaN power devices. 20) In 3D stacking systems, ESD protection is also one of the key issues.…”

Section: Introductionmentioning

confidence: 99%

Impact of three-dimensional stacking silicon on diamond substrate for the electrostatic discharge protection device

Ikeda

Nakagawa

Yoshida

et al. 2016

Jpn. J. Appl. Phys.

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In this paper, the electrostatic-discharge (ESD) protection capabilities of the protection devices fabricated on a silicon-on-diamond (SOD) structure and a conventional Si substrate are compared. The results showed that the ESD protection capability of the SOD substrate is higher than that of the silicon-on-insulator (SOI) substrate. We also evaluate the ESD protection device suitable for the SOD structure. In addition, we propose the three-dimensional (3D) stacking structure suitable for a power supply on a chip (power-SoC) and the best location for the implementation of the ESD protection device based on the results of device simulations.

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The silicon on diamond structure by low-temperature bonding technique

Cited by 5 publications

References 23 publications

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

Fabrication of silicon-on-diamond substrate with an ultrathin SiO₂ bonding layer

Impact of three-dimensional stacking silicon on diamond substrate for the electrostatic discharge protection device

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The silicon on diamond structure by low-temperature bonding technique

Cited by 5 publications

References 23 publications

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

Impact of three-dimensional stacking silicon on diamond substrate for the electrostatic discharge protection device

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Fabrication of silicon-on-diamond substrate with an ultrathin SiO₂ bonding layer