Parameter Extraction of Short-Channel a-Si:H TFT Including Self-Heating Effect and Drain Current Nonsaturation

Tang, Zhao; Park, Mun-Soo; Jin, Sung Hun; Wie, C. R.

doi:10.1109/ted.2010.2044294

Cited by 15 publications

(7 citation statements)

References 22 publications

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“…It is not surprising since, in poly-Si TFTs, the mobility increases as device channel length L decreases [3], [4] invalid. Recently, an R s extraction method has been proposed for a-Si TFTs [5], and a ΔL extraction method has been proposed for poly-Si TFTs [6]. Estrada et al [7] and Iñiguez et al [8] proposed R s extraction methods for poly-Si TFTs under large V g ; however, it is found that extracted R s values are with very large deviations.…”

Section: Introductionmentioning

confidence: 99%

Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

Zhou

Wang

Wong

2011

IEEE Electron Device Lett.

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Section: Introductionmentioning

confidence: 99%

Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

Zhou

Wang

Wong

2011

IEEE Electron Device Lett.

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“…As seen in Figure 2a, at a collector–emitter voltage of 7.0 V, current densities above 1 kA cm −2 can be achieved, despite processing without any high‐resolution structuring. Here, similar to transistors made from many other materials, e.g., amorphous silicon, [ 40 ] low temperature polysilicon, [ 41 ] oxide semiconductors, [ 42 ] as well as 2D semiconductors, [ 43,44 ] electrothermal feedback also occurs in OPBTs. At a current density j of 40 A cm −2 and a V CE of about 3.6 V, the transistors amplify signals up to 11.8 MHz (cf.…”

Section: Understanding the Operation Of Opbtsmentioning

confidence: 80%

Organic Permeable Base Transistors – Insights and Perspectives

Guo

Dollinger

Amaya

et al. 2021

Advanced Optical Materials

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Vertical organic transistors have emerged as a new device concept holding great promise to overcome the limitations of lateral organic transistors. In this regard, the organic permeable base transistor (OPBT), a special kind of vertical transistor, stands out due to excellent performance figures such as low‐voltage operation and high transition frequency measured in a pulse‐biasing mode. On the occasion of Prof. Karl Leo's 60th birthday, his contributions to the development of high‐performance OPBTs are honored and a perspective for the future of OPBT development is provided. The current state of the art of OPBTs is reviewed and the principles of the device operation are summarized. New insights into the formation of the permeable base layer, which is vital to the function of OPBTs, are discussed. Additionally, a full yield analysis on a batch of 144 equivalent OPBTs is reported and the device yield and temporal evolution of device parameters are statistically analyzed. This analysis proves a device yield of >90% for these short‐channel transistors, rendering the possibility for circuit integration. Finally, the scaling laws of OPBTs are derived and strategies for new materials and device layouts to push the performance to the gigahertz regime are concluded.

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“…Note that the key parameters given in N.E/ have not been treated as fitting parameters in this work. Instead, they are physical-based and can be experimentally extracted following the approach given in References [27,28]. As shown in Figure 3, the density of the Gaussian deep state N G has a significant effect on the surface potential in the sub-threshold region.…”

Section: Resultsmentioning

confidence: 99%

Modeling of current–voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution

Qin

Yao

2015

J. Semicond.

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Accounting for the deep Gaussian and tail exponential distribution of the density of states, a physical approximation for potentials of amorphous silicon thin-film transistors using a symmetric dual gate (sDG a-Si:H TFT) has been presented. The proposed scheme provides a complete solution of the potentials at the surface and center of the layer without solving any transcendental equations. A channel current model incorporating features of gate voltage-dependent mobility and coupling factor is derived. We show the parameters required for accurately describing the current-voltage (I -V ) characteristics of DG a-Si:H TFT and just how sensitively these parameters affect TFT current. Particularly, the parameters' dependence on the I -V characteristics with respect to the density of deep state and channel thickness has been investigated in detail. The resulting scheme and model are successively verified through comparison with numerical simulations as well as the available experimental data.

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Parameter Extraction of Short-Channel a-Si:H TFT Including Self-Heating Effect and Drain Current Nonsaturation

Cited by 15 publications

References 22 publications

Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

Organic Permeable Base Transistors – Insights and Perspectives

Modeling of current–voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution

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