We characterized the subgap density-of-states (DOS)-based reliability in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). Physical origins of the negative bias illumination stress (NBIS)-induced threshold voltage shift (V T ) with wavelength-dependence are quantitatively and systematically investigated. As a result, the photon energy is closely related to a creation of subgap states and the rate of V OX (charge trapping into the gate insulator) /V T is determined by the relation between the photon energy and the band offset. Our methodology is expected to be very useful for the development of next generation large-area high performance active matrix liquid crystal display (AMLCD) technology.
The predictability of a Liquid Crystal simulator has been investigated. Three critical parameters for the simulator i.e., transmittance, response time and viewing angle, were determined. The optimization was performed through elaborative correlation between experimental and simulation results. The results with optimized parameters show good agreement with experimental results within an error tolerance of 10%. The determined main parameters regarding each optical property are summarized and discussed.
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