Extraction of Electron Band Mobility in Amorphous Silicon Thin-Film Transistors

Lee, Jae Hong; Jang, Seunghyun; Lee, Jae-Ho; Jung, Keum‐Dong; Park, Mun-Soo; Yoo, Moon-Hyun; Shin, Hyungcheol

doi:10.7567/jjap.51.021402

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…In addition, the band mobility of a-Si:H are calculated through proper DC model for a TFT. [5] intra-grain defects are supposed to have no influence on device characteristics. Figure 4 shows the variation of the carrier concentration depending on crystallization process.…”

Section: Discussion and Resultsmentioning

confidence: 99%

P-12: 3-D TCAD Simulation for Describing Intrinsic Fluctuations in Polycrystalline Silicon Thin Film Transistors

Jang

Son

Choi

et al. 2016

SID Symposium Digest of Technical Papers

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In this work, we investigate the influence of grain boundaries on the performance of polycrystalline silicon thin-film transistors (poly-Si TFTs) for high resolution active-matrix organic light-emitting diode (AMOLED) displays using Voronoi diagram. The novel 2-D Voronoi polycrystalline grain structure can show a more realistic electrical parameter variability when the channel dimension is scaled down for high-resolution display. Using a proposed method, the impact of polycrystalline granular structure controlled by crystallization process is identified. Further, we predict the effect of grain boundary-induced variations under different laser annealing process, such as Excimer Laser Annealing (ELA).

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Section: Discussion and Resultsmentioning

confidence: 99%

P-12: 3-D TCAD Simulation for Describing Intrinsic Fluctuations in Polycrystalline Silicon Thin Film Transistors

Jang

Son

Choi

et al. 2016

SID Symposium Digest of Technical Papers

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“…From the recently published paper for ZnON TFTs [22], it was reported that the dominant charge transport mechanism in the ZnON TFT is the trap-limited conduction in the low V OV region and the phonon scattering-limited conduction in the high V OV region at temperatures near RT. The μ FE decreases as the density of tail states increases when the trap-limited conduction is the dominant charge transport mechanism in TFTs with disordered semiconductors [23]. In addition, the high density of tail states near the conduction band edge degrades the SS in the transition region and increases ΔV ON under the positive gate bias stress [24,25].…”

Section: Before Water Exposurementioning

confidence: 99%

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

2017

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We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnN bond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.

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Extraction of Electron Band Mobility in Amorphous Silicon Thin-Film Transistors

Cited by 2 publications

References 15 publications

P-12: 3-D TCAD Simulation for Describing Intrinsic Fluctuations in Polycrystalline Silicon Thin Film Transistors

P-12: 3-D TCAD Simulation for Describing Intrinsic Fluctuations in Polycrystalline Silicon Thin Film Transistors

Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure

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