p
                H
          -dependence of conduction type in cuprous oxide synthesized from solution

Wang, Weichao; Wu, Dien; Zhang, Qiming; Wang, Longcheng; Tao, Meng

doi:10.1063/1.3452383

Cited by 69 publications

(51 citation statements)

References 28 publications

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“…[28,29] However, some groups claimed that they obtained n-type Cu 2 O (especially those grown by using the electrodeposition method), and some explanations were put forward. [30,31] In our case, the clean MBE system would not introduce impurities to the film, which will affect the precise electrical measurements. Moreover, we choose the optimized growth parameters to get a high resistive ZnO film, which eliminates the influence from the ZnO layer underneath, and we control the oxidizing progress to avoid the existence of residual metallic Cu.…”

Section: Resultsmentioning

confidence: 99%

Temperature dependence of Cu ₂ O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Li¹,

Ye²,

Hou³

et al. 2012

Chinese Phys. B

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The role of temperature on the oxidation dynamics of Cu 2 O on ZnO (0001) was investigated during the oxidation of Cu (111)/ZnO (0001) by using the oxygen plasma as oxidant. A transition from single crystalline Cu 2 O (111) orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased from 300 • C to higher. The experimental results clearly showed the effect of oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu (111) film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu (111)/ZnO (0001).

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Section: Resultsmentioning

confidence: 99%

Temperature dependence of Cu ₂ O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Li¹,

Ye²,

Hou³

et al. 2012

Chinese Phys. B

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“…Under normal growth conditions, the formation energy of Cu + vacancies in the crystal lattice of Cu 2 O is comparatively low and, therefore, favors creating electron acceptors to yield p‐type conductivity in Cu 2 O films . However, it has been reported recently that n‐type Cu 2 O is also a possibility subject to specific growth conditions where formation of Cu rich and/or oxygen vacant situations are created in the crystal lattice . Indeed, this unique condition for the deposition of n‐Cu 2 O films was first reported recently by the observation that electrodeposition technique can adapt to produce n‐Cu 2 O films .…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, this unique condition for the deposition of n‐Cu 2 O films was first reported recently by the observation that electrodeposition technique can adapt to produce n‐Cu 2 O films . In the technique of electrodeposition of Cu 2 O, the concentration of oxygen precursor (hydroxyl ions) in the aqueous depositing bath can be easily controlled by adjusting the solution pH value . Hence the acceptor or donor concentrations in the deposited Cu 2 O film can be controlled with bath pH.…”

Section: Introductionmentioning

confidence: 99%

Effect of Bath pH on Interfacial Properties of Electrodeposited n‐Cu₂O Films

Kafi

Jayathileka

Wijesundera

et al. 2018

Physica Status Solidi (b)

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For developing semiconductor junction devices with low cost electrodeposited cuprous oxide (Cu 2 O), it will be very useful to investigate possibilities to improve the interface properties of Cu 2 O with suitable junction materials. We have investigated the effect of electrodeposition bath pH on the interfacial properties of n-Cu 2 O/electrolyte, n-Cu 2 O/Au, and n-Cu 2 O/p-Cu 2 O junctions by exploiting capacitance-voltage and photoresponse measurements. In addition, XRD and SEM measurements were also employed for thin film characterization. We have observed that for an increase in bath pH from 5.7 to 6.5 the resulted n-Cu 2 O films produced a shift in the extrapolated flat band potential at the aqueous electrolyte interface by 300 mV. In addition, we have observed that extrapolated built-in potentials at n-Cu 2 O/Au and n-Cu 2 O/p-Cu 2 O interfaces are also affected by the bath pH. With the change in bath pH, the shift in the flat band potential at n-Cu 2 O/electrolyte interface is completely opposite to the builtin potential shift at n-Cu 2 O/Au interface. We explained the observation as a result of the change in net charge at the interfacial surface layers of the interfaces, due to the change in bath pH of the films. Evidence in support of the explanation was further established by the observation that the builtin potential at n-Cu 2 O/Au interface is increased due to the surface modification of n-Cu 2 O films with S 2À ions. In addition, bath pH could be optimized in the fabrication process of Cu 2 O homojunctions to yield high photoactivity. In comparison with the best n-Cu 2 O/Au Schottky junction, we could fabricate a Cu 2 O homojunction with a 590% increase in V oc and an 800% increase in I sc . All the experimental evidences directed toward the idea that the relative band edge position of n-Cu 2 O at the interfaces is affected by the bath pH. The results reported in this investigation will be very useful in the applications of electrodeposited Cu 2 O films in photocataytic, solar cell, and other electronic devices.

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“…There are very few results reported on undoped thin films of Cu 2 O displaying n-type conductivity [156][157][158][159]. The origin of the n-type conductivity in these films is still a matter of debate, with oxygen vacancies (V O and copper antisites (Cu O being suggested as the source of donors [159][160]. In 2002, Fernandi et al…”

mentioning

confidence: 95%

A Review on Cu2O and CuI-Based p-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

Nandy¹,

Banerjee

Fortunato³

et al. 2013

Rev Adv Sci Engng

115

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Cu I -based p-type semiconducting and transparent oxide materials have recently gained renewed interest for potential applications in energy-related devices. As a counter-part of n-type transparent oxides like ZnO, SnO 2 , Indium tin oxide etc., development of p-type transparent conducting oxides has provided a new dimension to the field of 'Transparent Electronics' for new-generation energy-efficient optoelectronic devices. An all-transparent p-n junction device can lead to the formation of a 'functional window' that would transmit the visible light yet generates electricity by the absorption of ultra-violet part. In this article, a comprehensive review on the recent developments and trends on Cu I -based p-type oxide material is presented. The origin of visible transparency and p-type conductivity within these types of oxides are discussed. The properties, defect mechanisms and syntheses of various Cu I -based p-type oxides, including the parent compound, Cu 2 O are discussed in details. Also, the applications of various Cu I -based p-type oxides in energy-related fields and optoelectronic devices are discussed comprehensively. Finally, the future trend of the Cu I -based p-type transparent conducting oxides in terms of syntheses and applications are proposed for potential usage in diverse fields and novel devices.

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p H -dependence of conduction type in cuprous oxide synthesized from solution

Cited by 69 publications

References 28 publications

Temperature dependence of Cu ₂ O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Temperature dependence of Cu ₂ O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Effect of Bath pH on Interfacial Properties of Electrodeposited n‐Cu₂O Films

A Review on Cu<SUB>2</SUB>O and Cu<SUP>I</SUP>-Based <I>p</I>-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

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p H -dependence of conduction type in cuprous oxide synthesized from solution

Cited by 69 publications

References 28 publications

Temperature dependence of Cu 2 O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Temperature dependence of Cu 2 O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Effect of Bath pH on Interfacial Properties of Electrodeposited n‐Cu2O Films

A Review on Cu<SUB>2</SUB>O and Cu<SUP>I</SUP>-Based <I>p</I>-Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics

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Temperature dependence of Cu ₂ O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Temperature dependence of Cu ₂ O orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma

Effect of Bath pH on Interfacial Properties of Electrodeposited n‐Cu₂O Films