Cu 2 O is an interesting semiconductor with extraordinary high exciton binding energy, however exhibiting weak room temperature excitonic luminescence. The issue was addressed in literature emphasizing a detrimental role of native point defects responsible for optical quenching. Resolving the problem, we propose a method to manipulate the Cu and O vacancies contents opening a gateway for optoelectronic applications of Cu 2 O. Specifically, applying oxygen lean conditions, we observe a remarkable suppression of V Cu enabling strong room temperature exciton luminescence, while manipulating with V O reveals no impact on the signal. As a result, the excitonic signature was interpreted in terms of phonon assisted transitions.
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