Oxygen precipitation and creation of defects in neutron irradiated Cz‐Si annealed under high pressure

Abstract

Oxygen precipitation and creation of defects in Czochralski grown silicon (Cz‐Si, with interstitial oxygen concentration 1.1 × 1018 cm–3) subjected to irradiation with neutrons (5 MeV, dose 1 × 1017 cm–2) and treated under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270/1400 K are investigated by spectroscopic and X‐Ray (synchrotron) methods. The presence of point defects created by neutron irradiation stimulates oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changes of concentration and mobility of silicon interstitials and vacancies as well as of the VO – type defects. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The effect of neutron irradiation on oxygen aggregation processes in Si material treated under hydrostatic pressure

“…1c). This confirms previous conclusions 17 that neutron irradiation produces specific nucleation centers for the subsequent oxygen precipitation. It is important to note that the initial neutron irradiation of samples subsequently subjected to a HT treatment at 1000 °C, but at atmospheric pressure, results in a higher content of octahedral precipitates, although it results to intermediate content of platelets ones (Fig.…”

“…In some of our previous works 17–19 we have dwelled upon the issue of the interactions between thermal and radiation defects in silicon. In the present paper, as a continuation of those efforts, we explore the effect of neutron irradiation of silicon material on the development of oxygen precipitates produced by thermal treatments with the application of hydrostatic pressure.…”

Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si

“…Similarly as in the case of non -irradiated, reference R samples, processing of the NI samples at 1400 K under 10 5 Pa and 1.1 GPa leads to less pronounced oxygen precipitation (compare [8]). The (111) XRRSMs patterns for the R and NI samples processed at 1400 K under 1.1 GPa are presented in Fig.…”

“…Enhanced formation of plate -like oxygen precipitates was found in neutron -irradiated Cz-Si samples treated at 1270 K under 1.1 GPa [7]. First results on the effect of uniform stress on oxygen precipitation at ≥ 1270 K in (001) oriented Cz-Si with interstitial oxygen concentration c o = 1.1x10 18 cm -3 and with point defects introduced by neutron irradiation have been reported recently [8]. More detailed study of the effect of neutron irradiation and of annealing under enhanced pressure on oxygen precipitation and the creation of defects in (111) oriented Cz-Si with lower oxygen content (c o = 9.5x10 17 cm -3 ) is now presented.…”

“…Silicon vacancies as well as their complexes with oxygen (such as VO and V n O m [10]) contribute to oxygen precipitation at HT. Sequentially performed neutron irradiation and the HT -HP treatment introduce additional nucleation sites for oxygen precipitation [8], especially at lower temperatures (before reaching the treatment temperature) when the reaction channel VO → VO 2 → VO 3 has been reported to be affected by HP [12].…”