The effect of neutron irradiation on oxygen aggregation processes in Si material treated under hydrostatic pressure

Abstract

Silicon is the dominant material in electronic industry. Its use for various applications requires processing stages, important among them those involving thermal treatments. Such treatments in Si trigger the mechanisms of oxygen aggregation resulting in the formation of oxygen precipitates which have important influence on the quality of the material. In the present work, we have investigated the effect of thermal treatments, with or without the application of high hydrostatic pressure, on the development of oxygen precipitates. We have particularly studied the effect of neutron irradiation on the formation of the various oxygen agglomerates in the course of the above treatments. To this end, Si samples initially irradiated by neutrons were subjected to high temperature or/and high temperature‐high pressure treatments at 1000 and 1130 °C. Afterwards, infrared (IR) measurements were undertaken to study various precipitate morphologies, in particular those giving rise to an IR band around 1080 cm−1 related to octahedral‐shaped precipitates and an IR band at 1225 cm−1 attributed to platelet‐shaped precipitates. The obtained results were found to be consistent with reports cited in the literature. It was confirmed that the application of pressure during treatments as well as the irradiation with neutrons before these treatments enhance substantially the oxygen aggregation process. Comparisons of the results between treatments at 1000 and 1130 °C are presented and discussed.