Oxide formation during etching of gallium arsenide

Ghidaoui, D.; Lyon, S.B.; Thompson, G.E.; Walton, J.

doi:10.1016/s0010-938x(01)00086-5

Cited by 16 publications

(14 citation statements)

References 19 publications

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“…Chemical oxidation method is used as a part of surface GaAs substrates cleaning and rather is not used for making gallium oxide layers for devices (Ghidaoui, 2002).…”

Section: Chemical Oxidationmentioning

confidence: 99%

Wet Thermal Oxidation of GaAs and GaN

Korbutowicz¹,

Prazmowska²

2010

Semiconductor Technologies

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“…Chemical oxidation method is used as a part of surface GaAs substrates cleaning and rather is not used for making gallium oxide layers for devices (Ghidaoui, 2002).…”

Section: Chemical Oxidationmentioning

confidence: 99%

Wet Thermal Oxidation of GaAs and GaN

Korbutowicz¹,

Prazmowska²

2010

Semiconductor Technologies

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“…According to XPS studies by Ghidaoui et al, the initial GaAs(100) surface is arsenic deficient and contains an air-formed gallium-rich native oxide containing Ga 2 O 3 , As 2 O 3 and As 2 O 5 species. [25] The buried oxide/substrate interface was also reported to be arsenic deficient. [25] Surdu-Bob et al reported on the oxidation states of Ga metal and oxide powder reference samples, air-exposed GaAs wafers and wafers subjected to various surface treatments.…”

Section: Introductionmentioning

confidence: 99%

“…[25] The buried oxide/substrate interface was also reported to be arsenic deficient. [25] Surdu-Bob et al reported on the oxidation states of Ga metal and oxide powder reference samples, air-exposed GaAs wafers and wafers subjected to various surface treatments. [26] In cleaned wafers, they identified Ga 2 O, Ga 2 O 3 , As 2 O 3 and As 2 O 5 oxide species present at the surface with the major component of the surface being the Ga 2 O 3 oxide.…”

Section: Introductionmentioning

confidence: 99%

Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

Shandalov

Rozenblat

Kedem

et al. 2008

Surface & Interface Analysis

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The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM.The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2 O 3 at the PbSe/GaAs interface.

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“…The binding energy differences of ϳ1.6 eV (ϭE Ga-O ϪE Ga-As ) are in good agreement with previously reported values. [20][21][22][23] After the photowashing treatment, the intensity of the Ga-O bond drastically increased, but the peak for the Ga-As bond nearly disappeared. This indicated that photowashing is effective in producing the surface oxide layer.…”

Section: Iϭaa*tmentioning

confidence: 99%

“…After the photowashing treatment, two peaks for As-Ga and the As-O (As 2 O 3 ) were observed and the binding energy difference was ϳ3.8 eV, consistent with previous reports. [21][22][23][24] The peak intensity of the As-O bond increased drastically. In the meanwhile, the driving force for both As 2 O 3 and As 5 O 2 formation is quite large, i.e., ⌬G f 0 values at 298 K are Ϫ576 and Ϫ772 kJ/mol for As 2 O 3 and As 5 O 2 , respectively, indicating that formation of As 5 O 2 is thermodynamically preferred.…”

Section: Iϭaa*tmentioning

confidence: 99%

Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in AlxGa1−xAs/InGaAs (X=0.75) pseudomorphic high electron mobility transistors

Han

Choi

Lee

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Metal–insulator–semiconductor (MIS) Schottky diodes on Al0.75Ga0.25As/In0.2Ga0.8As pseudomorphic high electron mobility transistors were produced using both photowashing and H2O2 treatments. The Schottky contact on a GaAs layer showed enhancement of the Schottky barrier height of 0.11 eV for the photowashing and 0.05 eV for the H2O2 treatment, respectively. After the photowashing treatment, the Ga oxide (Ga2O3) was dominantly created. In the meanwhile, two types of As oxide (As2O3,As5O2) were mainly produced by the H2O2 treatment, which were distributed uniformly over the GaAs surface. At the same oxide thickness, the formation of the Ga oxide after the photowashing treatment is more effective in enhancement of the Schottky barrier height. This is due to the fact that the Ga oxide was more favorable in the creation of a fixed interface state density, which is known as an origin for increase of the barrier height, compared to the As oxide in the GaAs MIS Schottky diode.

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Oxide formation during etching of gallium arsenide

Cited by 16 publications

References 19 publications

Wet Thermal Oxidation of GaAs and GaN

Wet Thermal Oxidation of GaAs and GaN

Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

Electrical characteristics of metal–insulator–semiconductor Schottky diodes using a photowashing treatment in AlxGa1−xAs/InGaAs (X=0.75) pseudomorphic high electron mobility transistors

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