Oxidation of Silicon in High-Pressure Steam

Anomalous generation of pulsive noise was observed in devices masked with SiO2 during ion implantation in monolithic IC's. It has been found that this is not due to recoil implantation of oxygen in the SiO2 film, but to dielectric breakdown of the SiO2 film during ion implantation. This can be completely avoided by coating the SiO2 mask with thin conductive films such as aluminum or polycrystalline Si just before ion implantation. ABSTRACTCrystal growth and segregation in space were quantitatively investigated in a Bridgman-type configuration. It was established that the segregation behavior is diffusion controlled without interference from residual gravity, G-jitter, and surface tension gradients. Radial and longitudinal segregation effects were accounted for by a lateral diffusional dopant redistribution within the diffusion boundary layer brought about by the nonplanar morphology of the growth interface.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.171.57.189 Downloaded on 2015-06-13 to IP

Section: Wafermentioning

confidence: 87%

“…Thus, neither ideal mixing nor complete diffusion control can be achieved in growth from the melt. Moreover, stable boundary conditions cannot be maintained because of time-dependent variations of the convection flow (6).…”

Section: Table III Dielectric Breakdown Voltage Of Sio2mentioning

confidence: 99%

Effects of Thin Conductive Film Mask on Ion Implantation

Nakatsuka

Tanaka

Kikkawa

1978

“…The experiments were carried out with mass flow ratio of H2 and O2 being 1.76, and the total gas pressure inside the quartz tube of 7.0 kg/cm 2 (a partial pressure of H20 should be 6.6 kg/cm2). The details of the operation of the system have been reported elsewhere (5,6).…”

Section: Methodsmentioning

confidence: 99%

“…It is the purpose of this paper to report the masking capability of the silicon nitride film against the accelerated oxidation of silicon by using a newly developed high pressure steam oxidation system (5)(6)(7) and the control of the shape of the nitride-oxide edge, that is, the lateral oxidation of silicon beneath the mask nitride film in high pressure steam.…”

mentioning

confidence: 99%

Selective Oxidation of Silicon in High Pressure Steam

Miyoshi¹,

Tsubouchi²,

Nishimoto³

1978

The selective oxidation of silicon was investigated using a high pressure oxidation apparatus at a steam pressure of 6.6 kg/cm 2 (6.4 atm) and at temperatures between 800 ~ and ll00~The conversion characteristics of the silicon nitride film into silicon dioxide film in high pressure steam was analyzed on the basis of the well-known linear-parabolic relationship. The activation energy for the parabolic rate constant was found to be about 3.15 eV, which was about 5 times larger than that (0.7 eV) for silicon. On the other hand, the activation energy for the linear rate constant was about 1.25 eV which was a little smaller than that (2.03 eV) for silicon. The conventional silicon nitride film was found to be able to mask the selective oxidation even in the high pressure steam. The lateral oxidation of the silicon substrate beneath the masking nitride film occurred rapidly, with decreasing oxidation temperature at the fixed pressure. The suppression of the lateral oxidation can be achieved by increasing the thickness of the masking nitride film and also by decreasing that of the oxide pad. This high pressure oxidation process was compatible with the conventional atmospheric process. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 129.105.215.146 Downloaded on 2015-03-25 to IP

“…Such defects in the past have been associated with leaky junctions. Even though early work (3,4) demonstrated the feasibility of high pressure oxidation it is only recently that extensive interest has been generated (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15). In this paper, we describe a high pressure steam oxidation apparatus, the kinetics of oxide growth in this system, and some properties of the oxides.…”

Section: Bell Laboratories Allentown Pennsylvania 18103mentioning

confidence: 99%

Low Temperature, High Pressure Steam Oxidation of Silicon

Katz¹,

Howells²

1979

to be the result of oxygen absorption during the film growth (6). ConclusionsOn the basis of experimental results, it can be concluded that flash evaporation of the mixture of indium and CdS can indeed produce uniformly doped low resistivity CdS films. More importantly, the doping process can take place at low substrate temperature. This is essential in so far as the CdS/CuInSe2 solar cell is concerned, because it avoids the interdiffusion between CdS and CuInSe2. This doping process can also be used to dope other compounds such as CdSxSel-z with similar results.