Effects of Thin Conductive Film Mask on Ion Implantation

Abstract

Anomalous generation of pulsive noise was observed in devices masked with SiO2 during ion implantation in monolithic IC's. It has been found that this is not due to recoil implantation of oxygen in the SiO2 film, but to dielectric breakdown of the SiO2 film during ion implantation. This can be completely avoided by coating the SiO2 mask with thin conductive films such as aluminum or polycrystalline Si just before ion implantation. ABSTRACTCrystal growth and segregation in space were quantitatively investigated in a Bridgman-type configuration. It was established that the segregation behavior is diffusion controlled without interference from residual gravity, G-jitter, and surface tension gradients. Radial and longitudinal segregation effects were accounted for by a lateral diffusional dopant redistribution within the diffusion boundary layer brought about by the nonplanar morphology of the growth interface.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.171.57.189 Downloaded on 2015-06-13 to IP