Oxidation Enhanced Diffusion of Boron in Silicon‐on‐Insulator Substrates

Pindl, Stephan; Biebl, M.; Hammerl, E.; Schäfer, H.; Philipsborn, H. von

doi:10.1149/1.1838129

Cited by 9 publications

(3 citation statements)

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“…A single boron diffusivity was used to fit the diffusion in the all silicon samples and between the SiGeC layers for each annealing time and for each ambient. This is in relatively good agreement with previous reports of oxidation enhanced diffusion at 850°C [13,14]. 2.…”

Section: Introductionsupporting

confidence: 93%

Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers

Carroll

Sturm

2004

MRS Proc.

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Substitutional carbon is known to locally reduce silicon self-interstitial concentrations and act as a barrier to self-interstitial migration through the carbon rich regions. A silicon spacer between two carbon rich SiGe layers is fabricated in this work to examine self-interstitial generation in a region that is isolated from self-interstitial formation at the surface or in the silicon bulk. Boron marker layers above, below and in between two SiGeC layers are used to monitor the self-interstitial concentration between the substitutional carbon. No evidence of selfinterstitial depletion in the silicon spacer is observed, despite annealing in conditions believed sufficient to allow the self-interstitials to reach and react with surrounding substitutional carbon. Simulations of the self-interstitial and carbon indicate that the silicon self interstitial concentration in the spacer layer can be sustained in part due to a silicon self-interstitial recycling process through a reverse "kick-out" reaction. EXPERIMENTSingle crystal, 25 nm thick boron marker layers located at 150, 440, 600, and 900 nm below the surface were grown by rapid thermal chemical vapor deposition at temperatures of 550-750°C on Czchokralski silicon substrates with or without two 25 nm Si 0.775 Ge 0.22 C 0.005 layers at depths of 300 and 750 nm. The samples were subsequently annealed in either nitrogen for 30, 120 or 240 minutes at 850°C, or oxygen for 30, 60 or 120 minutes at 850°C. Carbon, germanium and boron concentrations before and after annealing are measured by secondary ion mass spectrometry (SIMS) with 20% and 5% uncertainties in concentration and depth, respectively.Mat. Res. Soc. Symp. Proc. Vol. 810

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Section: Introductionsupporting

confidence: 93%

Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers

Carroll

Sturm

2004

MRS Proc.

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“…A(R)= -7x10 -6 R 2 -6x10 -4 R -5x10 -2 , and [4] B(R)=2x10 -3 R 2 + 2x10 -2 R + 20. [5] In the center region, the etching rate is simply assumed to a constant value, C,…”

Section: Etching Rate Using Center Nozzlementioning

confidence: 99%

Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle

Habuka¹,

Ohashi²,

Mizuno³

et al. 2013

ECS Trans.

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A numerical calculation model for a single wafer wet etching rate using a swinging nozzle was developed on the basis of computational fluid dynamics and the rate theory. This model was validated using the etching rate of a silicon dioxide film by hydrogen fluoride aqueous solution, which was injected from a center and a non-center nozzle onto a rotating 200-mm diameter silicon wafer surface. The injection nozzle at the non-center position was accounted as a cylindrically-shaped inlet. Calculation showed the maximum etching rate at the outside edge position of the swinging nozzle, consistent with the trend of measurement.

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“…A silicon-on-insulator (SOI) wafer is currently a very important material, which is prepared by the wafer-bonding technique using two silicon wafers. [1][2][3][4] This production process requires a very clean and flat surface of a silicon dioxide film formed on the silicon wafer surface. In order to effectively improve the silicon dioxide film thickness uniformity after the oxidation, the single wafer wet etching method [5][6][7][8][9] is a useful technique.…”

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confidence: 99%

Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

Habuka¹,

Mizuno²,

Ohashi³

et al. 2013

ECS J. Solid State Sci. Technol.

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A surface chemical reaction model of silicon dioxide film etching by hydrogen fluoride aqueous solution using a single wafer wet etcher was numerically evaluated taking into account the Langmuir-type rate theory and the transport phenomena. The surface reaction process was assumed to consist of three steps, such as (i) hydrogen fluoride adsorption at the silicon dioxide surface, (ii) chemical reaction of silicon dioxide with hydrogen fluoride and (iii) desorption of the by-product from the surface. The rate constants determined by calculation which could reproduce the silicon dioxide etching rate obtained by experiment. The rate limiting step was additionally evaluated.

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Oxidation Enhanced Diffusion of Boron in Silicon‐on‐Insulator Substrates

Cited by 9 publications

References 0 publications

Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers

Boron Diffusion and Silicon Self-Interstitial Recycling between SiGeC layers

Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle

Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

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