Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle

Abstract

A numerical calculation model for a single wafer wet etching rate using a swinging nozzle was developed on the basis of computational fluid dynamics and the rate theory. This model was validated using the etching rate of a silicon dioxide film by hydrogen fluoride aqueous solution, which was injected from a center and a non-center nozzle onto a rotating 200-mm diameter silicon wafer surface. The injection nozzle at the non-center position was accounted as a cylindrically-shaped inlet. Calculation showed the maximum etching rate at the outside edge position of the swinging nozzle, consistent with the trend of measurement.

Measurement of Liquid Film Thickness Distribution Formed on a Two-fluid Jet Sprayed Surface Using a Fiber Optic Probe

“…In the wet processes of semiconductor manufacturing, such as resist removal and cleaning, the surface etch rate is the most important parameter and must be accurately predicted. In the semiconductor manufacturing process, which has changed from a batch type to a single wafer type [1], the surface etch rate depends not only on the concentration and temperature of the chemical solution but also on the thickness and velocity distribution of the liquid film on the wafer surface [2][3][4][5], so it is necessary to clarify the flow conditions on the wafer surface. Although the liquid film structure on the wafer surface has been well investigated for single liquid jet flows [6][7][8], the liquid film structure formed on the sprayed surface for two-fluid jets needs to be clarified.…”