Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

Habuka, Hitoshi; Mizuno, Katsunori; Ohashi, Shintaro; Kinoshita, Tetsuo

doi:10.1149/2.013306jss

Cited by 13 publications

(5 citation statements)

References 15 publications

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“…The chemical reactions during the pre-treatment proceeded as follows. [34][35][36] 6HF + SiO 2 → H 2 SiF 6 + 2H 2 O [ 1 ] After pre-treatment, Pd activation was carried out to enable the catalytic action and selective deposition in electroless Ni plating. The Pd ion solution was mixed according to the ratio PdCl 2 :HNO 3 :H 2 O = 0.1:20:1000.…”

Section: Methodsmentioning

confidence: 99%

Characterization and Selective Properties of Electroless Deposited All Wet Contact Electrode

Kim

Lee

Choi

et al. 2014

J. Electrochem. Soc.

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We report here the formation of an electrode through a selective electroless plating process. It consists of pre-treatment, selected Ni electroless plating, and Cu electroless chemical plating. Through the selective electrode formation technique using Pd/Ni/Cu, we established a high-efficiency and low-cost process for the manufacture of crystalline silicon solar cells. Measurements with a solar simulator showed that an open-circuit voltage of 0.684 V, short-circuit current density of 32.3 mA/cm 2 , form factor of 75.39%, and an efficiency of 18.21% was obtained for a monocrystalline silicon solar cell.

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Section: Methodsmentioning

confidence: 99%

Characterization and Selective Properties of Electroless Deposited All Wet Contact Electrode

Kim

Lee

Choi

et al. 2014

J. Electrochem. Soc.

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“…SiO 2 is usually etched with a reactive ion etching technique or wet‐etching with hydrogen fluoride (HF) solution 1–3,7–10 . However, the former has disadvantages in throughput because it requires a vacuum and it can only process one‐by‐one.…”

Section: Introductionmentioning

confidence: 99%

The role of silanol groups on the reaction of SiO₂ and anhydrous hydrogen fluoride gas

Nagai¹,

Hayashi²,

Urashima

et al. 2023

J Am Ceram Soc.

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It is essential to etch SiO2 for producing silica glass components, semiconductor devices, and so on. Although wet‐etching with hydrogen fluoride (HF) solutions is usually employed for this purpose, it faces a drawback that microstructures stick during the drying of the solution. To overcome this problem, we have developed a dry‐etching technique with gaseous HF at high temperatures. In the present study, an interesting phenomenon was found that silicon thermal oxides were much less etched than vitreous silica by gaseous HF. Such difference had not been found in wet‐ or humid HF gas etching. Because their bulk chemical formulae are the same (SiO2), it was suggested that the surface species affected the reaction rate. In fact, preprocessing with water vapor plasma remarkably increased the etching rate on the thermal oxides layer, and vacuum heating almost completely suppressed the reaction on the vitreous silica and the plasma‐treated thermal oxides. These results indicate that the surface silanol groups enhance the reaction between SiO2 and gaseous HF. Based on the results, a model of chain reaction for SiO2 and gaseous HF was proposed, where the surface silanol groups act as the reaction center.

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“…In microelectromechanical system manufacturing and the fabrication of semiconductor electronic devices, semiconductor materials are generally processed inline or in batches, during mechanical, chemical, and thermal process steps. , Studies on single wafer etching methods focus on surface reactions, fluid flow, , temperature, and swinging nozzles . Wet-cleaning batch processes, especially for semiconductor silicon materials or silicon solar cells, belong to the most popular techniques and have considerable influence on the wafer quality .…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

Mohr

Dannenberg

Moldovan

et al. 2020

Ind. Eng. Chem. Res.

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In microelectromechanical system manufacturing and especially in the photovoltaic industry, wet-chemical baths are used for surface structuring, conditioning, and cleaning. Ozonebased wet-chemical cleaning processes show, in addition to the cleaning of the silicon wafers, the ancillary effect of intended material etch back. Previous studies observed inhomogeneities over the wafer surface occurring during the ozone-based wet chemical process. Since a detailed observation during the process in the basin is not possible, simulations are carried out to understand what causes these inhomogeneities. Therefore, an existing microscopic two-dimensional (2D) model for reaction modelling is extended stepwise from a length of several microns to the full length of 157 mm of an industrial solar cell. Subsequently, the 2D model is transferred to a three-dimensional (3D) model. In addition, an initial water layer, originating from the previous rinsing step, and the movement of the handling system were taken into account for modeling. This approach allows the estimation of the etching process over an entire wafer surface for the first time and enables better understanding of the reasons for the inhomogeneities. The water layer in connection with the fast movement of the handling system and the masking, originating from carrier rods, leads to stripes on the wafer surface, shown by differences in reflection. As the water layer is not removed homogeneously, the occurring chemical reaction in the masked areas is delayed and results in an uneven etching of the wafer surface. The removal over the entire wafer surface in the simulation (8.51 ± 0.37 nm) is in accordance with the experimental data (9.02 ± 1.10 nm). This presented model can serve as a base for future work to estimate the effects of parameter changes, e.g., plant design or the composition of the etching solution on the homogeneity of the wet chemical cleaning and etch back process, thus enabling a cost efficient process optimization.

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Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

Cited by 13 publications

References 15 publications

Characterization and Selective Properties of Electroless Deposited All Wet Contact Electrode

Characterization and Selective Properties of Electroless Deposited All Wet Contact Electrode

The role of silanol groups on the reaction of SiO₂ and anhydrous hydrogen fluoride gas

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

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Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

Cited by 13 publications

References 15 publications

Characterization and Selective Properties of Electroless Deposited All Wet Contact Electrode

Characterization and Selective Properties of Electroless Deposited All Wet Contact Electrode

The role of silanol groups on the reaction of SiO2 and anhydrous hydrogen fluoride gas

Numerical Simulation of an Entire Wafer Surface during Ozone-Based Wet Chemical Etching

Contact Info

Product

Resources

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The role of silanol groups on the reaction of SiO₂ and anhydrous hydrogen fluoride gas