Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration

Byun, Ki Yeol; Colinge, Cindy

doi:10.1016/j.microrel.2011.09.006

Cited by 12 publications

(7 citation statements)

References 22 publications

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“…Byun et al [142][143][144] and Gity et al [145][146][147] systematically investigated low-temperature Ge/Si wafer bonding based on a free radical surface treatment. O and N free radicals were used to activate wafer surfaces to be hydrophilic.…”

Section: Plasma-activated Bondingmentioning

confidence: 99%

A review: wafer bonding of Si-based semiconductors

Chen

2020

J. Phys. D: Appl. Phys.

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Wafer bonding techniques, which are very different from epitaxial growth techniques, can be used not only for the fabrication of micro-electromechanical systems (MEMS), silicon on insulator (SOI), and Si-based device integration, but have recently been applied to the achievement of high-quality homojunctions and heterojunctions in the photoelectric field. That is, carrier transport at the interface of the wafer-bonded junction should be unimpeded and carrier recombination at the bonded interface should be restrained. For Si/Si wafer bonding, although a high bonding strength and a bubble-free bonded interface are needed for the fabrication of the MEMS and SOI, a perfect Si/Si bonded interface which is expected to be bubble-free, oxide-layer-free, and dislocation-free is needed for the achievement of high-performance photoelectric devices, such as Ge/Si single-photon avalanche photodiodes. On the other hand, for Ge/Si heterogeneous hybrid integration (high lattice mismatch), threading dislocations (TDs) in the Ge film can be eliminated by low-temperature heterogeneous wafer bonding, due to the lower diffusion rate of misfit dislocations (MDs) at the Ge/Si bonded interface. This is very different from epitaxial growth, in which high-density TDs form in the integrated Ge layer due to the threading of MDs at high-temperature. In this paper, we review the wafer bonding of Si-based semiconductors based on different bonding methods. The advantages and disadvantages of different bonding methods are pointed out for comparison. We focus on the illustration of the fabrication of Si/Si and Ge/Si wafer pairs with TD-free, bubble-free, and oxide-layer-free bonded interfaces. Finally, the outlook for the development of Si/Si and Ge/Si wafer bonding and devices based on the wafer bonding technique is considered. We trust that this work may provide guidance for the low-temperature heterogeneous hybrid integration of different group materials with ultrahigh lattice mismatch, such as GeSn on Si and III-V materials on Si.

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Section: Plasma-activated Bondingmentioning

confidence: 99%

A review: wafer bonding of Si-based semiconductors

Chen

2020

J. Phys. D: Appl. Phys.

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“…Hydrophilic wafer bonding of surface oxides or nitrides has now been applied to a number of differing materials such as germanium, 123 fused silica 124 and titanium. 125 While the precise parameters vary for each material, hydrophilic silicon wafer bonding provides a good general model for the bonding process.…”

Section: When Heated Above 800mentioning

confidence: 99%

A Review of Hydrophilic Silicon Wafer Bonding

Masteika

Kowal

Braithwaite

et al. 2014

ECS J. Solid State Sci. Technol.

100

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Hydrophilically activated direct wafer bonding is a technique for gluelessly attaching oxide-coated wafers together. This ability is a vital step in the construction of many microelectronic and microelectromechanical (MEMS) devices. In particular this technique is widely used in the production of 3d interconnected devices due to the lack of interlayer. © 2014 The Electrochemical Society. [DOI: 10.1149/2.007403jss] All rights reserved.Manuscript submitted June 5, 2013; revised manuscript received December 9, 2013. Published February 3, 2014 This review covers the key papers relating to the theory, techniques and quantification of hydrophilically activated silicon wafer bonding. This begins with a review of the history and development of the art. Bond strength characterization is then reviewed followed first by models of physical deformation and then by plasma and radical activation techniques.In the interests of clarity and succinctness this review is not an attempt to exhaustively catalog all direct bonding wafer literature. Excluded are hydrophobic and UHV bonding, and the many papers applying bonding techniques to differing combinations of wafer materials. This paper concludes with a summery of the state of the art of direct wafer bonding and a summation of the current wafer-bonding model derived from the papers reviewed. History and Establishment of the Art

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“…This kind of structure has been shown to perform well as a photodetector [12]. Some researchers have shown that it is possible to integrate germanium and silicon for photonic devices [13]. Techniques such as chemical vapor deposition have been used for this purpose, creating layers with a growth rate of 10 Å / min [14][15].…”

Section: Introductionmentioning

confidence: 99%

Lateral PIN Photodiode with Germanium and Silicon Layer on SOI Wafers

Silva

Doria

Simoen

et al. 2023

Preprint

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Here, it has been verified through numerical simulations calibrated to experimental data the changes that the insertion of a germanium layer can bring to the electrical power generation of a silicon solar cell. The studied device is a lateral PIN photodiode embedded in a wafer with SOI (Silicon-On-Insulator) technology as part of a CMOS (Complementary Metal Oxide Semiconductor) circuit. The insertion of a germanium layer on top or below a silicon PIN diode has been considered. Results showed that different semiconductor characteristics (bandgap, mobility, and absorption coefficients) result in a general improvement in the solar cell performance, therefore allowing a better understanding of the phenomena that occur in the photogeneration of a cell with a heterojunction between germanium and silicon.

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Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration

Cited by 12 publications

References 22 publications

A review: wafer bonding of Si-based semiconductors

A review: wafer bonding of Si-based semiconductors

A Review of Hydrophilic Silicon Wafer Bonding

Lateral PIN Photodiode with Germanium and Silicon Layer on SOI Wafers

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