Output conductance at saturation like region on Line-TFET for different dimensions

Filho, Walter Gonçalez; Martino, João Antônio; Agopian, Paula Ghedini Der

doi:10.1109/sbmicro.2019.8919309

Cited by 5 publications

(10 citation statements)

References 4 publications

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“…They are well-suited for use in analog/radio frequency (RF) applications due to their higher intrinsic gain and lower output conductance. 22 Figure 8 shows the intrinsic gain (A i ) of the device as the ratio between gm and g d . In order to have great results with analog signals, it is important to have a high intrinsic gain.…”

Section: Resultsmentioning

confidence: 99%

“…31 Analog/RF performance.-This section is dedicated to a complete analysis of analog/RF performance. In addition to the previously discussed fundamental analog characteristics, the cutoff frequency (f T ), transit time (τ), gain bandwidth product (GBP), transconductance generation factor (TGF), and transconductancefrequency product (TFP), 20,[22][23][24][25][26] project a significant perception of the performance of the analog/RF system.…”

Section: Resultsmentioning

confidence: 99%

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High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Shalini,

Kumar

2023

ECS J. Solid State Sci. Technol.

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A novel structure of double gate Schottky barrier tunnel field effect transistor (DG-SBTFET) has been designed and simulated. The DG-SBTFET has two sources (NiSi) and two gate metals with an HfO2. Silvaco-TCAD simulator has been used for investigating the analog and radio frequency performance of the DG-SBTFET. The proposed device is compared with the conventional devices in terms of electrical parameters including ION current, ION/IOFF ratio, RF performance including transconductances, cut-off frequency, transit time, gain bandwidth product, transconductance generation factor, and transconductance frequency product. Further, we simulate the linearity characteristics of the DG-SBTFET device is compared it with other conventional devices, including the second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), and third-order input intercept point (IIP3). Hence, the proposed DG-SBTFETis suitable for low-power and high-frequency applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Shalini,

Kumar

2023

ECS J. Solid State Sci. Technol.

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“…Source-to-drain tunneling plays a significant role in the entire transfer characteristics of the Line-TFET and not only in the OFF-state leakage current. This tunneling happens through the short channel point-TFET formed by the P-i-N junction composed of the source-intrinsic-drain region interfaces with channel length equal to Lsd, as shown in figure 1(a) [16]. In order to further explore this phenomenon, the device is simulated by the TCAD program Sentaurus with gate length Lg=1 μm, pocket thickness tpocket=6 nm, source-to-drain separation Lsd=25 nm and uniform pocket doping of 1 × 10 19 cm −3 (boron).…”

Section: Gate Length Variationmentioning

confidence: 99%

“…Figures 5(a) and (b) indicate that this leakage current is highly dependent on Vds and could be significant if line tunneling gets too faint. Figure 5(c) shows that the parasitic point-TFET responsible for this current is a short channel transistor that suffers from high drain induced barrier thinning (DIBT) [16], similarly to what was previously reported [17]. While increasing Lsd would reduce source-todrain tunneling, allowing operation at lower bias voltages with smaller gate lengths and also improving gd, it must be limited to values smaller than about 40 nm to avoid a significant increase in the device's inner resistance, once this is a high resistivity region.…”

Section: Gate Length Variationmentioning

confidence: 99%

Analog design with Line-TFET device experimental data: from device to circuit level

Filho

Simoen

Rooyackers

et al. 2020

Semicond. Sci. Technol.

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This work studies the use of line-tunnel field effect transistor (Line TFET) devices in analog applications. It presents the DC and small signal characteristics of these devices and compares them with other TFET topologies and with conventional MOSFET technology. The Line-TFET's saturation characteristics are also closely studied, through simulations and experimental characterization, revealing that point tunneling leakage from source to drain not only limits the bias voltage and the gate area but also makes the output conductance independent of the gate length. A common source stage is designed to illustrate and further explore this fact, making comparisons with conventional MOSFET technology. In order to obtain an amplifier with very high voltage gain, a two-stage operational transconductance amplifier is designed considering two different starting points: fixed transistor efficiency (gm/Ids) or fixed normalized current (Ids/W) in order to obtain similar conditions of performance for Line-TFET and MOSFET devices. It is revealed that the Line-TFET design always achieves much higher intrinsic voltage gain (of up to 115 dB) and is more suitable for low power, low frequency applications. Thus, a third design is performed with Line-TFET devices by using gate lengths of 100 nm, achieving 71 dB of open loop voltage gain and 18 nW of power dissipation, which may be suitable for applications such as bio-signal acquisition.

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“…Valor não exato devido a modulação de canal 4. Valor não exato devido a saturação da velocidade de portadores 5. Considerando Vin ≈ Vincm (ponto de terra virtual)…”

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Projeto de aplicação de amplificadores operacionais de transcondutância baseados no comportamento experimental de line-TFETs.

Filho¹

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Av Ganho intrínseco de tensão [V/V; dB] Ad Ganho diferencial de tensão de malha aberta [V/V; dB] Av' Ganho de tensão de malha fechada [V/V; dB] Avcm Ganho de modo comum [dB] B Fator exponencial de tunelamento [V/cm] Cc Capacitância de compensação [F] Cd Capacitância de depleção [F/µm 2 ] Cgd Capacitância entre porta e dreno [F/µm 2 ] Cgs Capacitância entre porta e fonte [F/µm 2 ] Ci Capacitância de entrada [F] CL Capacitância de linha [F] Cn Capacitância de feedback [F] Cox Capacitância do óxido de porta [F/µm 2 ]

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Output conductance at saturation like region on Line-TFET for different dimensions

Cited by 5 publications

References 4 publications

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

High-Frequency Performance Characteristics of the Double-Gate Schottky Barrier Tunnel Field Effect Transistor in Analog and Radio-Frequency Applications

Analog design with Line-TFET device experimental data: from device to circuit level

Projeto de aplicação de amplificadores operacionais de transcondutância baseados no comportamento experimental de line-TFETs.

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