Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

Brown, E. R.; Söderström, J. R.; Parker, C. D.; Mahoney, L.J.; Molvar, K.M.; McGill, T. C.

doi:10.1063/1.104902

Cited by 783 publications

(310 citation statements)

References 7 publications

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“…24,25 Additionally, a number of solid state diode sources have been extended to higher frequency. 26,27 Of all of the techniques, those most closely related to the fast scan submillimeter spectroscopic technique ͑FASSST͒ system described here are also based on backward wave oscillator ͑BWO͒ tubes. In 1953, Kompfner and Williams demonstrated that self-sustained oscillation in traveling wave structures could be achieved by the interaction between the oppositely directed group and phase velocities.…”

Section: B Current Spectroscopic Practice: the Source And Detector Pmentioning

confidence: 99%

A fast scan submillimeter spectroscopic technique

Petkie¹,

Goyette²,

Bettens³

et al. 1997

Review of Scientific Instruments

148

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A new fast scan submillimeter spectroscopic technique ͑FASSST͒ has been developed which uses a voltage tunable backward wave oscillator ͑BWO͒ as a primary source of radiation, but which uses fast scan (ϳ10 5 Doppler limited resolution elements/s͒ and optical calibration methods rather than the more traditional phase or frequency lock techniques. Among its attributes are ͑1͒ absolute frequency calibration to ϳ1/10 of a Doppler limited gaseous absorption linewidth (Ͻ0.1 MHz, 0.000 003 cm Ϫ1 ), ͑2͒ high sensitivity, and ͑3͒ the ability to measure many thousands of lines/s. Key elements which make this system possible include the excellent short term spectral purity of the broadly (ϳ100 GHz) tunable BWO; a very low noise, rapidly scannable high voltage power supply; fast data acquisition; and software capable of automated calibration and spectral line measurement. In addition to the unique spectroscopic power of the FASSST system, its implementation is simple enough that it has the prospect of impacting a wide range of scientific problems.

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Section: B Current Spectroscopic Practice: the Source And Detector Pmentioning

confidence: 99%

A fast scan submillimeter spectroscopic technique

Petkie¹,

Goyette²,

Bettens³

et al. 1997

Review of Scientific Instruments

148

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“…21,22 Despite all these desirable properties (low voltage, high PVCR and high speed), most RTDs and RITDs of the 6.1 Å family are poorly suited as photodetectors, since the staggered or even broken type-II bandgap alignment does not provide the means for sufficient accumulation of minority charge carriers at the RTS. The AlSb/GaSb double barrier RTS resembles conventional AlGaAs/GaAs RTDs and provides a well-defined type-I band alignment with large offsets in conduction and valence band.…”

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confidence: 99%

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

Pfenning

Knebl

Hartmann

et al. 2017

Applied Physics Letters

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We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga 0.84 In 0.16 Sb and GaAs 0.05 Sb 0.95 prewell emitters leads to room temperature resonant tunneling with peak-to-valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ -L-valley energy separation and consequently depopulation of L-valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb. a) Electronic mail to: Andreas. Pfenning@physik.uni-wuerzburg.de b) Electronic mail to: Fabian.Hartmann@physik.uni-wuerzburg.de The three semiconductors GaSb, InAs and AlSb of the so-called 6.1 Å family cover a wide range of bandgap energies and unique material properties, which make them particularly suitable for applications in high-speed electronics and as mid-infrared optoelectronic semiconductor devices. 1,2 During the past few years, application related research focused on mid-infrared light sources and detectors. 3,4 Especially the progress on interband cascade lasers (ICLs) and interband cascade detectors (ICDs) with type-II superlattice absorbers has driven the field. [5][6][7] In a recent publication we proposed an alternative mid-infrared photodetector concept based on resonant tunneling diodes (RTDs) with 6.1 Å family semiconductors. 8 RTDs can be exploited as highspeed and low-noise amplifiers of weak, optically excited electrical signals. 9-11 Unlike avalanche photodiodes, in which the multiplication gain originates from impact ionization, the RTD photodetection principle is based on the modulation of the resonant tunneling current via Coulomb interaction in presence of photogenerated minority charge carriers. [12][13][14] This mechanism provides very high amplification factors exceeding several hundred thousand at considerably low operation voltages. 10,11,15,16 The GaSb/InAs/AlSb material system has brought forth resonant tunneling structures (RTS) with unique and enhanced characteristics. prewell emitters leads to room temperature resonant tunneling with peak-to-valley current ratios of 1.45 and The HR-XRD spectrum of RTD 1 shows a single peak at Δ 0°, which indicates a good and high quality latticematched crystal growth of the RTD and the AlGaAsSb contact region. For RTD 2 and RTD 3, compressive and tensile strain secondary patterns arise at smaller and higher angles, respectively, caused by the incorporation of the pseudomorphically GaInSb and GaAsSb regions. The secondary pattern of RTD 2 is more pronounced compared to RTD 3 due to the three times higher In compared to As concentration.Circular RTD mesa structures with diameters from 2 µm up to 13 µm are defined by optical lithography and dry-chemical etching. The etching depth is about 50 nm below the dou...

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“…Resonant tunnelling diodes (RTDs) have attracted much attention owing to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applications span from high frequency signal generation and high speed signal processing to millimetre-wave frequency optoelectronics [2].…”

mentioning

confidence: 99%

Self-oscillation and period adding from resonant tunnelling diode–laser diode circuit

Figueiredo¹,

Romeira²,

Slight³

et al. 2008

Electron. Lett.

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A hybrid optoelectronic integrated circuit comprising a laser diode driven by a resonant tunnelling diode can output various optical and electrical signal patterns that include self-sustained oscillations, subharmonic and harmonic locking and unlocked signals, with potential applications in optical communication systems.Introduction: Negative resistance elements are important components in oscillator circuits and form the basis of many other nonlinear circuits. Resonant tunnelling diodes (RTDs) have attracted much attention owing to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applications span from high frequency signal generation and high speed signal processing to millimetre-wave frequency optoelectronics [2]. In this Letter we report self-oscillations, subharmonic and harmonic locking and unlocked oscillations in a laser diode hybrid optoelectronic integrated circut (OEIC) driver employing a RTD. The circuit operation is similar to the functioning of the resonant tunnelling chaos generator reviewed in [3]. However, the novel aspect here is the optical output. In optical communication systems these operation modes have promising applications including clock recovery, clock division and data encryption.

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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

Cited by 783 publications

References 7 publications

A fast scan submillimeter spectroscopic technique

A fast scan submillimeter spectroscopic technique

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

Self-oscillation and period adding from resonant tunnelling diode–laser diode circuit

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