Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm-2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.

11111L5 lL 1.8 MICROCOPY RESOLUTION TEST CHART NATIONAL BUREAU OF STANDARDS-1I963-A

The photonic crystal is investigated as a substrate material for planar antennas in the microwave and millimeter-wave bands. Experimental results are presented for a bow-tie antenna on a (111)-oriented facecentered-cubic photonic-crystal substrate with a band gap between approximately 13 and 16 GHz. When driven at 13.2 GHz, the antenna radiates predominantly into the air rather than into the substrate. This suggests that highly efficient planar antennas can be made on photonic-crystal regions fabricated in semiconductor substrates such as GaAs.

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We report room-temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1-nm-thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal delay associated with the quasibound-state lifetime. They are also in accordance with a generalized impedance model, described here, that includes the effect of the transit time delay across the depletion layer. Although the peak-to-valley ratio of the 420 GHz diode is only 1.5:1 at room temperature, we show that its speed is limited by the parasitic series resistance rather than by the low negative conductance. A threefold reduction in this resistance, along with a comparable increase in the peak-to-valley ratio, should allow oscillations up to about 1 THz.

A new equivalent circuit is derived for the double-barrier resonant tunneling diode. An essential feature of this circuit is the addition of an inductance in series with the differential conductance G of the device. The magnitude of the inductance is τN/G where τN is the lifetime of the (Nth) quasibound state through which all of the conduction current is assumed to flow. This circuit model is used to derive values of theoretical oscillator power that are in much better agreement with experimental results than theoretical predictions made without the inductance. The conclusion is drawn that the response of the double-barrier structure to a time varying potential is consistent with the coherent picture of resonant tunneling.

Wide band-gap (WBG) field-effect devices are known to provide a system-level performance benefit compared to silicon devices when integrated into power electronics applications. However, the near-ideal features of these switching devices can also introduce unexpected behavior in practical systems due to the presence of parasitic elements. The occurrence of self-sustained oscillation is one such behavior that has not received adequate study in the literature. This paper provides an analytical treatment of this phenomenon by casting the switching circuit as an unintentional negative resistance oscillator. This treatment utilizes an established procedure from the oscillator design literature and applies it to the problem of power circuit oscillation. A simulation study is provided to identify the sensitivity of the model to various parameters, and the predictive value of the model is confirmed by experiment involving two exemplary WBG devices: a SiC vertical-channel JFET and a SiC lateral-channel MOSFET. The results of this study suggest that susceptibility to self-sustained oscillation is correlated to the available power density of the device relative to the parasitic elements in the circuit, for which wide band-gap devices, to include SiC and GaN transistors, are in a class approaching that of the radio frequency domain.

Laboratory and field studies were conducted during 1993 and 1994 to quantify interplant movement of Heliothis virescens (F.) larvae in pure and mixed plantings of cotton, Gossypium hirsutum L., with ('Event 531') and without ('Coker 312') the expression of Cry1Ac delta-endotoxin protein of Bacillus thuringiensis Berliner. Field studies were conducted with neonate, 4-, and 7-d-old larvae placed on 3-plant experimental units and observed at 24, 48, 72, and 96 h after inoculation of larvae. Combining larval movement across observations of neonates, 4-, and 7-d-old larvae, an estimated 52% of the larvae on pure plantings of Coker 312 had moved at least 1 plant by the cumulative time required to reach the age of 10 d. More larvae placed on Event 531 cotton moved to an adjacent plant (13% of the neonates had moved at least 1 plant within 24 h) than those placed on Coker 312 (0% of the neonates had moved at least 1 plant within 24 h). When larvae were placed on Event 531 plants, an estimated 82% of the larvae had moved to an adjacent plant by cumulative age of 10 d. Collectively, these data indicate that movement of larvae from plant to plant increases with larval age and occurs more rapidly for larvae placed on Event 531 cotton than on Coker 312. Previous studies have suggested that resistance to B. thuringiensis could develop more rapidly in insects exposed to seed mixtures of plants with and without endotoxin if larvae move between plants and if an external refuge exists. These data provide evidence of larval movement between plants in seed mixtures.