Origin of low-frequency noise in pentacene field-effect transistors

Xu, Yong; Minari, Takeo; Tsukagoshi, Kazuhito; Chroboczek, J. A.; Balestra, F.; Ghibaudo, G.

doi:10.1016/j.sse.2011.01.002

Cited by 45 publications

(41 citation statements)

References 22 publications

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“…The band-like carrier transport in the present single crystal form of C 8 -DNBDT-NW was unambiguously verified by the Hall effect measurements and electron spin resonance spectroscopy 33,34 . Previous studies about the 1/f noise in disordered organic semiconductors have revealed that the 1/f noise in I D originates mainly from carrier number fluctuation (δn), i.e., δI ∝ e(δn)μ [23][24][25][26] , which is referred to as McWhorter's model (see "Methods" section) 35,36 . McWhorter's model, which is widely adapted to the 1/f noise in inorganic semiconductors, accounts for carrier capture/emission processes at the transistor's gate dielectric interface and describes the resulting current fluctuations.…”

Section: Resultsmentioning

confidence: 99%

“…It has been known that the low-frequency electronic noise commonly observed in OFETs is considered to be flicker noise (1/f noise). Among various models of 1/f noise, the most common manifestation is the McWhorter's model [23][24][25][26] , that is also used to interpret 1/f noise in conventional Si metal-oxidesemiconductor (MOS) FETs 35 . McWhorter's model takes the carrier capture/ emission to the channel into account; the fluctuation of the number of carrier δn leads to current fluctuation, δI ∝ e(δn)μ.…”

Section: Methodsmentioning

confidence: 99%

“…As clearly seen in both equations, the noise follows 1/f. To estimate trap DOS (N), we used the tunnel attenuation length λ = 4.2 nm, which is equivalent to the thickness of monolayer C 8 -DNBDT-NW 25,26 . It should be noted that, in OFETs, one has handled the alternative description of 1/f, namely Hooge's model 36 .…”

Section: Methodsmentioning

confidence: 99%

“…It is known that jitter, which are variations of the edge of a digital signal from true periodicity, often impairs the bit error rate in digital logic, which becomes more predominant in nanoscale devices and sensing applications 15,16 . Recent investigations of the 1/f noise in organic field-effect transistors based on π-conjugated polymers [17][18][19] , amorphous or polycrystalline small molecules [20][21][22][23][24][25][26] were mainly focusing on device degradation under ambient and/or irradiated conditions, and on the contact resistance effect. Unfortunately, these organic compounds typically have unavoidable structural disorder and their mobility is not sufficient for high-speed circuit operation.…”

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confidence: 99%

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Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

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Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm 2 V −1 s −1 ) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the noise feature will be indispensable to further improve the circuit stability and durability. Here we performed noise measurements in solution-processed organic single crystal transistors, and discovered that a low trap density-of-states due to the absence of structural disorder in combination with coherent band-like transport gives rise to an unprecedentedly low flicker noise. The excellent noise property in organic single crystals will allow their potential to be fully exploited for high-speed communication and sensing applications.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

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“…For OTFT based on high-κ dielectric, the fluctuation in carrier number caused by the trapping and detrapping processes in the gate dielectric dominates the fluctuation in the drain current. Therefore, the power spectral density of the drain current S I D ( f ) can be expressed as follows [8]:…”

Section: Resultsmentioning

confidence: 99%

High-Performance Pentacene Thin-Film Transistor With High-$\kappa$ HfLaON as Gate Dielectric

Han¹,

Tang

Leung³

et al. 2013

IEEE Electron Device Lett.

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Pentacene organic thin-film transistor (OTFT) using high-k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied. The HfLaON film is deposited using reactive sputtering of Hf-La target in Ar/O 2 /N 2 ambience with different N 2 flow rates and then annealed in N 2 . All the OTFTs can operate at low voltage with a threshold voltage as low as −0.53 V. The OTFT with an optimal nitrogen content can achieve a carrier mobility of 0.71 cm 2 / V · s, which is about twice that of its counterpart with HfLaO gate dielectric.Index Terms-Fluorination, HfLaON, high-κ dielectric, organic thin-film transistor (OTFT).

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Correlated In Situ Low‐Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells Using Fullerene and Non‐Fullerene Acceptors

Luck

Sangwan

Hartnett

et al. 2017

Adv Funct Materials

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Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here, we investigate charge transport and current fluctuations by performing correlated lowfrequency noise and impedance spectroscopy measurements on two BHJ OPV systems, one employing a fullerene acceptor and the other employing a dimeric PDI acceptor. In the dark, OPVs. An inverse correlation is also observed between noise spectral density and power conversion efficiency. Overall, these results show that low-frequency noise spectroscopy is an effective in-situ diagnostic tool to assess charge transport in emerging photovoltaic materials, thereby providing quantitative guidance for the design of nextgeneration solar cell materials and technologies.

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Origin of low-frequency noise in pentacene field-effect transistors

Cited by 45 publications

References 22 publications

Remarkably low flicker noise in solution-processed organic single crystal transistors

Remarkably low flicker noise in solution-processed organic single crystal transistors

High-Performance Pentacene Thin-Film Transistor With High-$\kappa$ HfLaON as Gate Dielectric

Correlated In Situ Low‐Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells Using Fullerene and Non‐Fullerene Acceptors

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