High-Performance Pentacene Thin-Film Transistor With High-$\kappa$ HfLaON as Gate Dielectric

Han, Chuanyu; Tang, Wing Man; Leung, C. H.; Ming, Chi; Lai, P.T.

doi:10.1109/led.2013.2281661

Cited by 14 publications

(7 citation statements)

References 13 publications

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“…Recently, the addition of La has been reported to suppress the oxygen vacancies in Hfbased high-j materials, 14,15 and HfLaO was used as gate dielectric for high-performance pentacene OTFTs, showing high carrier mobility, small threshold voltage, low hysteresis, and small sub-threshold swing (SS). 16,17 Nb 2 O 5 has high j value ($29), but it has small band gap ($4.4 eV) and suffers from a high concentration of oxygen vacancies, 18 whose gap states lead to charge trapping. On the other hand, La 2 O 3 has larger band gap ($6 eV), but it is very hygroscopic and unstable in air, easily forming hydroxide.…”

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confidence: 99%

High-performance organic thin-film transistor by using LaNbO as gate dielectric

Han

Song

Tang

et al. 2015

Applied Physics Letters

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Pentacene organic thin-film transistors (OTFTs) using La x Nb (1Àx) O y as gate dielectric with different La contents (x ¼ 0.347, 0.648) have been fabricated and compared with those using Nb oxide or La oxide. The OTFT with La 0.648 Nb 0.352 O y as gate dielectric can achieve a high carrier mobility of 1.14 cm 2 V À1 s À1 (about 1000 times and 2 times those of the devices using Nb oxide and La oxide, respectively), and has negligible hysteresis of À0.130 V, small sub-threshold swing of 0.280 V/ dec, and low threshold voltage of À1.35 V. AFM and XPS reveal that La can suppress the formation of oxygen vacancies in Nb oxide while Nb can alleviate the hygroscopicity of La oxide, which results in a more passivated and smoother dielectric surface, leading to larger pentacene grains grown and thus higher carrier mobility. The OTFT with Nb oxide has an anticlockwise hysteresis but the device with La oxide shows an opposite direction. This can be explained in terms of donorlike traps due to oxygen vacancies and acceptor-like traps originated from hydroxyl ions formed after La 2 O 3 absorbing water moisture. V

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confidence: 99%

High-performance organic thin-film transistor by using LaNbO as gate dielectric

Han

Song

Tang

et al. 2015

Applied Physics Letters

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“…From another perspective, with Zr, Nb or Y added in La 2 O 3 , the moisture absorption of La 2 O 3 could be suppressed, and so larger pentacene grains were grown on the smoother oxide surface (Figure 15a), thus resulting in higher carrier mobility. Table 4 lists the device properties of pentacene OTFT's with La-based ternary oxides as gate dielectrics [41,[118][119][120][121][122], with both NbLaO and TaLaO providing carrier mobility higher than 1 cm 2 /Vs. Similar to IGZO TFT, NbLaO can also achieve high performance for OTFT (high carrier mobility and high on/off ratio), which indicates its high potential in the applications of flexible electronics.…”

Section: Thin-film Transistors (Tfts)mentioning

confidence: 99%

Advances in La-Based High-k Dielectrics for MOS Applications

2019

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This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.

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“…For instance, in the case of OTFT-based sensors, relatively high voltages are needed to obtain proper device functionality, thus reducing their actual portability and raising serious safety concerns for their application on-body and their integration with biochemical elements. Although several strategies for low voltage operation have been reported [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 ], only a few are exploited with large-area processes [ 25 , 26 , 27 , 28 ]. In these last cases, the application of OTFTs to sensing applications is not yet explored.…”

Section: Introductionmentioning

confidence: 99%

Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates

Lai

Viola

Cosseddu

et al. 2018

Sensors

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Organic Field-Effect Transistors (OFETs) are attracting a rising interest for the development of novel kinds of sensing platforms. In this paper, we report about a peculiar sensor device structure, namely Organic Charge-Modulated Field-Effect Transistor (OCMFET), capable of operating at low voltages and entirely fabricated with large-area techniques, i.e., inkjet printing and chemical vapor deposition, that can be easily upscaled to an industrial size. Device fabrication is described, and statistical characterization of the basic electronic parameters is reported. As an effective benchmark for the application of large-area fabricated OCMFET to the biomedical field, its combination with pyroelectric materials and compressible capacitors is discussed, in order to employ the proposed device as a temperature pressure sensor. The obtained sensors are capable to operate in conditions which are relevant in the biomedical field (temperature in the range of 18.5–50 °C, pressure in the range of 102–103 Pa) with reproducible and valuable performances, opening the way for the fabrication of low-cost, flexible sensing platforms.

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High-Performance Pentacene Thin-Film Transistor With High-$\kappa$ HfLaON as Gate Dielectric

Cited by 14 publications

References 13 publications

High-performance organic thin-film transistor by using LaNbO as gate dielectric

High-performance organic thin-film transistor by using LaNbO as gate dielectric

Advances in La-Based High-k Dielectrics for MOS Applications

Floating Gate, Organic Field-Effect Transistor-Based Sensors towards Biomedical Applications Fabricated with Large-Area Processes over Flexible Substrates

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