Origin of <i>n</i>-type conductivity of low-temperature grown InP

Chen, Weimin; Dreszer, P.; Prasad, Amrita; Kurpiewski, A.; Walukiewicz, W.; Weber, E. R.; Sörman, E.; Ḿonemar, B.; Liang, Bing; Tu, C. W.

doi:10.1063/1.357052

Cited by 39 publications

(7 citation statements)

References 11 publications

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“…P In antisites and V P vacancies are dominant donors in InP and InP 1−x Bi x . Chen et al found a level of 0.23 eV below conduction band minimum (CBM) and a level 0.12 eV above CBM hypothetically corresponding to P In level and V P level [18], respectively, in which the P In level does not accord with our experimental results as shown in Section 3.3. V P and P In concentration dominates the electron concentration at low Bi content (x < 1.83%) and high Bi content (x >1.83 %), respectively.…”

Section: Electrical and Transport Propertiescontrasting

confidence: 77%

Indium Phosphide Bismide

Zhang¹,

Pan²,

Wu³

et al. 2016

Progress in Metallic Alloys

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Indium phosphide bismide is a new member to the dilute bismide λamily. Since the irst synthesis by molecular beam epitaxy MBE in , it has cut a igure λor its abnormal properties comparing with other dilute bismides. Bismuth Bi incorporation is always a diiculty λor epitaxial growth oλ dilute. In this chapter, it shows how to regulate MBE growth parameters and their inluence on Bi incorporation in InP −x Bi x . Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its efect on physical properties is perλormed. InP −x Bi x shows strong and broad photoluminescence at room temperature, which is a potential candidate λor λabricating super-luminescence diodes applied λor enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briely introduced in this chapter.

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Section: Electrical and Transport Propertiescontrasting

confidence: 77%

Indium Phosphide Bismide

Zhang¹,

Pan²,

Wu³

et al. 2016

Progress in Metallic Alloys

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“…In the reduced atmosphere, Mohapatra and Kröger pointed out that a Ti ion is in the charge state of ϩ3 at the Al 3ϩ site, and induces a deep impurity level occupied by one electron within the band gap ͑4.25 eV from the conduction band minimum͒. [7][8][9] The objective of this study is, therefore, to verify a possibility of Ti 3ϩ association or clustering in Al 2 O 3 using first-principles calculations. 5 When dilute Ti 3ϩ solutes are dispersed through the Al 2 O 3 lattice ͑namely, in the isolated state of Ti 3ϩ ions͒, therefore, significant additional energy is required for excitation of an electron at the impurity level to the conduction band.…”

Section: Y Ikuharamentioning

confidence: 97%

Formation of titanium-solute clusters in alumina: A first-principles study

Matsunaga

Mizoguchi

Nakamura

et al. 2004

Applied Physics Letters

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Electronic structures and stability of substitutional Ti3+ clusters in Al2O3 were investigated by first-principles pseudopotential calculations using large supercells. It was found that a substitutional Ti3+ defect induces an extra defect level in the band gap, and the defect levels have strong bonding interactions in the cluster formation. In addition, binding energies of Ti3+ clusters increased with increasing numbers of Ti3+ ions, indicating that cluster formation is energetically favorable. The resulting impurity band within the band gap of Al2O3 will contribute to the significant electronic conduction of Ti-doped Al2O3 observed experimentally.

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“…9 In InP, the presence of these defects has a different character, creating n-type free carriers. 8 In this article, we have investigated the possibility to achieve high resistivity and ultrashort photoexcited carrier lifetimes in As ϩ -and P ϩ -implanted InP.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast trapping times in ion implanted InP

Carmody

Boudinov

Tan

et al. 2002

Journal of Applied Physics

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Asϩ and P ϩ implantation was performed on semi-insulating ͑SI͒ and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1ϫ10 16 cm Ϫ2 and p-type InP was implanted with doses between 1 ϫ10 12 and 1ϫ10 16 cm Ϫ2 . Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.

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Origin of n-type conductivity of low-temperature grown InP

Cited by 39 publications

References 11 publications

Indium Phosphide Bismide

Indium Phosphide Bismide

Formation of titanium-solute clusters in alumina: A first-principles study

Ultrafast trapping times in ion implanted InP

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