Indium Phosphide Bismide

Abstract

Indium phosphide bismide is a new member to the dilute bismide λamily. Since the irst synthesis by molecular beam epitaxy MBE in , it has cut a igure λor its abnormal properties comparing with other dilute bismides. Bismuth Bi incorporation is always a diiculty λor epitaxial growth oλ dilute. In this chapter, it shows how to regulate MBE growth parameters and their inluence on Bi incorporation in InP −x Bi x . Structural, electronic and optical properties are systematically reviewed. Thermal annealing to study Bi thermal stability and its efect on physical properties is perλormed. InP −x Bi x shows strong and broad photoluminescence at room temperature, which is a potential candidate λor λabricating super-luminescence diodes applied λor enhancing spatial resolution in optical coherence tomography. Quaternary phosphide bismide, including InGaPBi and InAlPBi, is briely introduced in this chapter.