Ultrafast trapping times in ion implanted InP

Carmody, C.; Boudinov, H.; Tan, Hark Hoe; Jagadish, Chennupati; Lederer, Max; Kolev, Vesselin Z; Luther‐Davies, Barry; Dao, Lap Van; Gal, M.

doi:10.1063/1.1493651

Cited by 10 publications

(7 citation statements)

References 14 publications

(12 reference statements)

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“…This thermalization slows at high fluence [ Fig. 6(a)], in keeping with many, [28][29][30] but not all, 31 prior observations. The slowing is attributed to the hot-phonon effect: 32 hot electrons couple primarily to LO phonons.…”

supporting

confidence: 49%

Diffusion of degenerate minority carriers in a p-type semiconductor

Weber

Kittlaus

2013

Journal of Applied Physics

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We report ultrafast transient-grating experiments on heavily p-type InP at 15 K. Our measurement reveals the dynamics and diffusion of photoexcited electrons and holes as a function of their density n in the range 2 × 10 16 to 6 × 10 17 cm −3 . After the first few picoseconds the grating decays primarily due to ambipolar diffusion. While at low density we observe a regime in which the ambipolar diffusion is electron-dominated and increases rapidly with n, at high n it appears to saturate at 34 cm 2 /s. We present a simple calculation that reproduces the main results of our measurements as well as of previously published measurements that had shown diffusion to be a flat or decreasing function of n. By accounting for effect of density on charge susceptibility we show that, in p-type semiconductors, the regime we observe of increasing ambipolar diffusion is unique to heavy doping and low temperature, where both the holes and electrons are degenerate; in this regime the electronic and ambipolar diffusion are nearly equal. The saturation is identified as a crossover to ambipolar diffusion dominated by the majority carriers, the holes. At short times the transient-grating signal rises gradually. This rise reveals cooling of hot electrons and, at high photocarrier density, allows us to measure ambipolar diffusion of 110 cm 2 /s in the hot-carrier regime.

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supporting

confidence: 49%

Diffusion of degenerate minority carriers in a p-type semiconductor

Weber

Kittlaus

2013

Journal of Applied Physics

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“…6,7 The main results are summarized in Table I, which shows the electrical and optical characteristics of the samples as measured by the Hall effect and time resolved photoluminescence on these samples, after annealing at 600 and 700°C. Prior to implantation, a semi-insulating InP wafer has a mobility eff , of approximately 2000 cm 2 V Ϫ1 s Ϫ1 , sheet carrier concentration N s of ϳ10 7 cm Ϫ2 and sheet resistance R s of ϳ3 ϫ10 8 ⍀/ᮀ.…”

Section: Electrical and Optical Propertiesmentioning

confidence: 99%

“…Ion implanted InP has a great deal of potential in terms of device applications; because of its short carrier lifetimes, this material could be used in saturable absorbers for the mode locking of solid state lasers, and when p-InP samples are implanted, or Fe ϩ is implanted into the semi-insulating material, it is possible to achieve high sheet resistivities in addition to the short lifetimes, and thereby obtain a material which could be used for fabrication of ultrafast photodetectors. 6,7 High resistivity InP has also been investigated through isolation studies. [8][9][10][11] Below we present the results from our investigations into the structural, electrical, and optical properties of implanted semi-insulating InP, focusing in particular on how the damage profile can be correlated with profiles of electrical characteristics.…”

Section: Introductionmentioning

confidence: 99%

Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Carmody

Tan

Jagadish

et al. 2004

Journal of Applied Physics

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High temperature rapid thermal annealing of phosphorous ion implanted In As ∕ In P quantum dots Appl. Phys. Lett. 90, 093106 (2007) Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.

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“…In general, the decay times are shorter for the lower annealing temperaiures, at which the annealing of the crystal lattice should be less complete, resulting in a greater concentration of non-radiative recombination.centres. This trend of shorter decay times with lower annealing temperatures has been found for implantation with other ions also [9]. The periodic fringes which appear on the negative angle side of the main peak after implantation have been associated with a well defined (steep strain gradient) region of positive strain (expansion).…”

Section: Resultsmentioning

confidence: 75%

“…& E due to the activation of the shallow donors, which can also be seen in the increase of N, to values > lOI3 as well as the increase of kE to -1.5 times the unimplanted value. Implantation with other elements such as P, Cia and In has yielded similar electrical behaviour as a function of annealing temperature, although with peculiarities resulting from the individual implant species [9]. Table I lists the optical lifetimes measured for samples implanted with As+, and after annealing at 600 and 700T for 30 seconds.…”

Section: Resultsmentioning

confidence: 94%