Orientation dependent ferroelectric properties in samarium doped bismuth titanate thin films grown by the pulsed-laser-ablation method

Abstract

Samarium doped bismuth titanate thin films with the composition of Bi3.25Sm0.75Ti3O12 and with strong preferred orientations along the c axis and the (117) direction were fabricated on Pt∕TiO2∕SiO2∕Si substrate by pulsed laser ablation. Measurements on Pt∕BSmT∕Pt capacitors showed that the c-axis oriented film had a small remanent polarization (2Pr) of 5μC∕cm2, while the highly (117) oriented film showed a 2Pr value of 54μC∕cm2 at an electrical field of 268kV∕cm and a coercive field Ec of 89kV∕cm. This is different from the sol-gel derived c-axis oriented Bi3.15Sm0.85Ti3O12 film showing a 2Pr value of 49μC∕cm2.

Retraction: Ferroelectric anisotropy of sol–gel‐derived Bi3.15Nd0.85Ti3O12 thin films on SrTiO3 single‐crystal substrates

“…A possible reason for the different 2P r values of the above two c-axisoriented BNdT films fabricated by the same pulsed-laser deposition might be the difference of substrates. Cheng et al [12] [13]. Thus, it can be seen that fabrication methods and substrates play an important role in the ferroelectric anisotropy of lanthanoide-substituted Bi 4 Ti 3 O 12 films.…”

Lead-free potassium bismuth titanate thin film with complex Aurivillius layer structure

“…Due to its lead-free nature, it is also a candidate as an environmentally friendly piezoelectric material ͑piezoelectric tensor element, d 33 Ϸ 20 ϫ 10 −12 C / N͒. 6,7 In the crystal structure of the bismuth layer-structured ferroelectrics, perovskite blocks ͑A m−1 B m O 3m+1 , A=Bi, B =Ti,Nb,Ta͒ composed of m layers of BO 6 octahedra, with A-site cations occupying the holes created by the octahedra, are sandwiched between Bi 2 O 2 layers, which is suggested to be the structural reason for the excellence of the ferroelectric performance of this family of materials. 8,9 Besides Bi 4 Ti 3 O 12 and its derivatives with three layers of TiO 6 octahedra, SrBi 2 Ta 2 O 9 is another kind of bismuth layer-structured ferroelectric material with m = 2 that shows excellent ferroelectric properties, which have been well studied.…”

Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

“…9 Good fatigue resistance has also been demonstrated by this thin film. It should be noted that all these properties were measured at room temperature.…”

“…[10][11][12][13] So the stability of doped BT thin film at elevated temperature should be evaluated, although its layered structure, where there is alternation with ͑Bi 2 O 2 ͒ 2+ slabs, forms a deep potential well to localize the oxygen vacancies, preventing aggregation at the electrode/film interface and resulting in a fatigue-free character at room temperature. 14 9 A Pt top electrode with dimensions of 0.0314 mm 2 was coated by magnetron sputtering with a shadow mask to form a metal-ferroelectricmetal structure. The ferroelectric properties of the films were measured by an aixACCT EASY CHECH 300 system.…”