Ferroelectric properties of Bi3.25Sm0.75V0.02T2.98O12 thin film at elevated temperature

Abstract

The ferroelectric behavior in terms of electrical polarization and fatigue and dielectric properties at elevated temperature of the ferroelectric Bi3.25Sm0.75V0.02T2.98O12 thin film fabricated by the pulsed laser deposition method were studied. Its switchable polarization increased at elevated temperature, and the coercive field decreased at the same time due to the strong domain depinning process at higher temperature. This film shows almost a polarization-fatigue-free character at room temperature, but the aggregation and diffusion of the thermally activated long-range oxygen vacancies caused strong domain pinning, and thus a poor fatigue resistance was observed at elevated temperature.

Influences of ScTa co-substitution on the properties of Ultra-high temperature Bi3TiNbO9-based piezoelectric ceramics

“…However, the piezoactivity of pure BTNO ceramics is quite low (d 33 <7 pC/N) [10] for high temperature applications. The A-site substitution or/and B-site substitution have been shown to be effective in modifying the structure and polarization process [11][12][13][14][15][16][17][18][19][20][21][22][23]. Only a few works have addressed the properties of cation-modified BTNO-based ceramics.…”

Effect of sintering temperature on microstructure and electrical properties of Sr1−x(Na0.5Bi0.5) x Bi2Nb2O9 solid solutions

“…This attitude can be explained by the increase in density and in grain size as the sintering temperature is increased [60][61][62]. The raise in dielectric constant may be attributed to the mobile charge carriers related to oxygen vacancies [63]. In addition, agglomerations of powders become a resistant for ions to polarize between grains and grain boundaries [64].…”

Microstructural and ferroelectric properties of rare earth (Ce, Pr, and Tb)-doped Na0.5Bi4.5Ti3O15 thin films

“…Various methods, such as compositional compensation by the addition of excessive Na and Bi ions and cationic doping, have been established to obtain single-phase NaBTi and to control oxygen vacancies, respectively [2,4,16]. In fact, for Bi-based ferroelectric compounds, doping with RE metal ions has been strongly recommended as a way of controlling the leakage current and to improve the ferroelectric properties [2,9,17].…”

“…BLSFs possess special properties, such as low switching voltage, good fatigue endurance, and a chemical composition free of toxic lead [2,[5][6][7][8][9][10]. Therefore, BLSFs are considered to be an effective alternative for PZT in upcoming ferroelectric products.…”