Organic single-crystal complementary inverter

Abstract

The authors demonstrate the operation of an organic single-crystal complementary circuit in the form of a simple inverter. The device is constructed from a high mobility p-type organic single-crystal transistor of tetramethylpentacene (TMPC) and a n-type single-crystal transistor of N,N′-di[2,4-difluorophenyl]-3,4,9,10-perylenetetracarboxylic diimide (PTCDI). Field-effect mobilities of up to 1.0cm2∕Vs are reported for TMPC devices, while a mobility of 0.006cm2∕Vs is reported for a n-type PTCDI single-crystal device. Considering that organic single-crystal inverters have not yet been explored, they are representative of potential candidates for use in high-performance complementary circuits.

Solution‐Grown Organic Single‐Crystalline p‐n Junctions with Ambipolar Charge Transport

“…FETs based on the junctions showed ambipolar charge transport characteristics, with the best performance of 0.16 cm 2 V −1 s −1 for hole mobility and 0.17 cm 2 V −1 s −1 for electron mobility, respectively that are among the highest reported mobilities of single‐crystal‐based ambipolar organic transistors . Compared to the ambipolar devices composed of separated organic single crystals, the contacting p‐n single crystals reported here promise ideal interfaces at the junctions for exciton generation/dissociation. As such, these single‐crystalline p‐n junctions provide a platform to deepen the fundamental knowledge and to fabricate high‐performance electronic devices of organic semiconductors.…”

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

“…The Inverter is considered to be the most basic logic circuit element for Complementary Metal-Oxide Semiconductor (CMOS) technology [51]. However, unipolar logic circuits are widely employed in the organic electronics field.…”

Heterogeneous Monolithic Integration of Single‐Crystal Organic Materials

“…The crystallinity of the organic materials can be controlled by using the appropriate synthetic methods. Several devices have been fabricated successfully through this process using crystal growth by physical vapor transport . A complementary inverter circuit was prepared using p‐type tetramethylpentacene (TMPC) and n‐type N,N ′‐di[2,4‐difluorophenyl]‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI) single crystals .…”

“…Several devices have been fabricated successfully through this process using crystal growth by physical vapor transport . A complementary inverter circuit was prepared using p‐type tetramethylpentacene (TMPC) and n‐type N,N ′‐di[2,4‐difluorophenyl]‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI) single crystals . These crystals were carefully picked up with Teflon‐coated tweezers and installed electrostatically across source‐drain electrodes in the bottom‐contact configuration.…”