Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

Abstract

It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output.

DC Characterization and Fast Small-Signal Parameter Extraction of Organic Thin Film Transistors With Different Geometries

“…Note that, when device is on, currents in the ~100µA-1mA range are achieved with mobilities between 1 to 1.75 cm 2 /V•s, under operating voltages around ±30V [17]. These voltages are much larger than in CMOS technology (~0.8V) [18], but usual in organic devices [19]. For the interdigitated OTFTs, ID increases as expected, linearly with device width (Fig.…”

A complete compact model for simulation of organic electronic systems

“…The metal interconnect layer (Au 50 nm) was sputtered and patterned to create electrical connections. Finally, the third protective passivation layer (SU-8, 450 nm thick) was deposited in a similar way to the first two passivation layers [20]. It is worth mentioning that the OTFT devices were manufactured in various W/L aspect ratios and present a common architecture based on a top gate bottom contact structure, as shown in Fig.…”

Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

“…In organic thin film transistors (OTFTs), organic semiconductors and insulators are used. 16 Following the literature, TFT has four basic structures, based on the position of the electrodes with respect to the gate; top-gate/top-contacts, 17 top-gate/bottom-contacts, 18 bottom-gate/top-contacts, 19 and bottom-gate bottom-contacts. 20 In other words, these structures can be classified into two categories: the coplanar structure where the three electrodes are placed on the same side of the active layer (such as bottom-gate/bottom-contacts and top-gate/top-contacts) and the staggered structures where the gate electrode is placed on one side of active layer and the other side has sourced and drain electrodes.…”