Simulating the I‐V characteristics of an ultrathin IGZO‐based thin film transistor using finite element method

Abstract

Thin film transistors (TFTs) are ranked as one of the promising field-effect transistors in the electronic industry. TFTs showed a great potential in many applications where liquid crystal displays, touchscreens, and biosensors are of the leading. In the current study, we are demonstrating a numerical carrier transport model based on finite element method (FEM), to investigate InGaZnO (IGZO) based TFTs. Amorphous silicon TFT has been simulated as a bare device. The impact of scaling down the dimension of the TFT, up to 30 nm channel length, on the output performance characteristics of the transistor has been addressed. Additionally, the effects of active semiconductor layer doping concentration and oxide layer thickness have been investigated. Moreover, a novel approach is introduced to correlate the selected input design parameters with a set of characteristic outputs including threshold voltage, on/off current ratio, and subthreshold swing. The proposed model correlates input and outputs using a characteristic matrix with nine coefficients, making it possible to predict, that is, interpolate, the characteristic outputs within the system boundaries. The suggested model was verified with respect to input data as well as data from the literature showing a very acceptable agreement.

OFET Informatics: Observing the impact of organic transistor's design parameters on the device output performance using a machine learning algorithm

“…This section illustrates the results extracted from the proposed ML model. the first subsection demonstrates a validation process for the suggested FEM numerical solver against our previously reported simulation and experimental results, 18,23 as well as analytical and experiential data from the literature. Second, one-dimension optimization is introduced using our randomforest model.…”

“…In addition, the previous investigation recorded a very acceptable and controllable on/off current ratio and subthreshold swing (SS) 19–22 . In such a context, selecting the primary active OSC material, the device dimension, and the doping level is the critical design parameters for the OFETs 23 . Moreover, the OFET architecture, based on the gate and the contact arrangement, can influence the overall device I‐V transfer characteristics 24 .…”

“…Also, it might vary from one architecture to another and shows dependence on the channel length scale. 23 Specifically, nano-scale channel length reported different behavior when compared with micro-scale devices. 19 Various attempts have been conducted in such a context to seek an optimum OFET design for specific design constraints.…”

“…Following the literature, the impact of these design parameters is not uniform. Also, it might vary from one architecture to another and shows dependence on the channel length scale 23 . Specifically, nano‐scale channel length reported different behavior when compared with micro‐scale devices 19 .…”

“…[19][20][21][22] In such a context, selecting the primary active OSC material, the device dimension, and the doping level is the critical design parameters for the OFETs. 23 Moreover, the OFET architecture, based on the gate and the contact arrangement, can influence the overall device I-V transfer characteristics. 24 In addition, such variation in device arrangement is considered an additional selling point for the OFET, extending its applications according to the sensing process interfacing needed.…”