Organic inkjet-patterned memory array based on ferroelectric field-effect transistors

Abstract

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Flexible nonvolatile organic ferroelectric memory transistors fabricated on polydimethylsiloxane elastomer

“…The change in memory window of the OFMT was approximately 1 V at most. These results indicate that the proposed OFMT fabricated on the PDMS can be utilized under bending for any flexible device [23,[34][35][36][37][38]. In this work, the bending radius could not be reduced to smaller state owing to the limitations of substrate size and machine specification.…”

A Low‐Operating‐Power and Flexible Active‐Matrix Organic‐Transistor Temperature‐Sensor Array

“…Although most OFETs fabricated currently remain on a laboratory scale, and the transistors are individual and isolated devices, a larger scale of integrated organic circuits or transistor arrays in an active-matrix confi guration can offer considerably more powerful and unique functionalities in different areas in practical application aspects, such as display back panels, [ 5 ] sensor arrays, [ 6,7 ] and data-storage devices. [ 8 ] As opposed to an array in passive-matrix form, an active-matrix array allows random and individual access to each unit with rapid addressing speed while simultaneously maintaining a high device density, due to retaining shared electrode lines. However, since the three electrodes (gate, source, and drain) of each OFET are connected to different word lines, bit lines, and grounds, the failure or breakdown of one single device could cause the whole row or column to malfunction, depending on the connection.…”

Non-volatile organic memory with sub-millimetre bending radius

“…In particular, high-performance flexible non-volatile memories based on various data storage principles such as resistive type [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] , flash 4,[25][26][27][28][29] and ferroelectric [30][31][32][33][34][35][36][37][38][39][40] hold great promise in a variety of emerging applications ranging from mobile computing to information management and communication. While the recent advances in this area are impressive, novel organic materials and electronic device structures that can be tightly rolled, crumpled, stretched, sharply folded and unfolded repeatedly without any performance degradation still need to be developed.…”

“…Although significant progress has been made in improving certain characteristics of ferroelectric polymer memories [30][31][32][33][34][35] , only a few works have addressed mechanically flexible Fe-FETs in which characteristic ferroelectric switching has been examined under a relatively mild bending radius on the order of a few millimetres [36][37][38] . Besides ferroelectric memories, most of the previous non-volatile memories are categorized as bendable devices when their bending radii are much greater than 1 mm (Supplementary Table 1).…”