2014
DOI: 10.1038/ncomms4583
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Non-volatile organic memory with sub-millimetre bending radius

Abstract: High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p-and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-cotrifluoroethylene) thin insulator layer and use a quinoidal oligothiophene… Show more

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Cited by 203 publications
(102 citation statements)
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References 63 publications
(80 reference statements)
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“…Although the ITO/PET substrate absorbs most light with λo320 nm, the flexible C 3 N 2 H 5 ClO 4 /ITO/ PET sample shows a high transmittance of 470% at λ = 390-800 nm, exhibiting excellent transparency in the visible region (Figure 2d). 19 The ferroelectric properties of the films on the ITO/PET are characterized using both PFM and a conventional ferroelectric tester. 11,15 Although most of the film is in a single domain state, domain structures are still observed in various regions.…”
Section: Optical and Electrical Propertiesmentioning
confidence: 99%
See 1 more Smart Citation
“…Although the ITO/PET substrate absorbs most light with λo320 nm, the flexible C 3 N 2 H 5 ClO 4 /ITO/ PET sample shows a high transmittance of 470% at λ = 390-800 nm, exhibiting excellent transparency in the visible region (Figure 2d). 19 The ferroelectric properties of the films on the ITO/PET are characterized using both PFM and a conventional ferroelectric tester. 11,15 Although most of the film is in a single domain state, domain structures are still observed in various regions.…”
Section: Optical and Electrical Propertiesmentioning
confidence: 99%
“…Flexibility of the C 3 N 2 H 5 ClO 4 film To demonstrate the flexibility of the film, 19 we investigate the ferroelectric domain structure of the C 3 N 2 H 5 ClO 4 on the ITO/PET under both tensile and compressive strains using PFM by bending the sample positively and negatively, respectively. Compared with the original domains (Figures 5a and b), no significant changes are observed in the domain structure as the bending radius decreases to 7.9 mm (Figure 5c) and 3.1 mm (Figure 5d).…”
Section: Optical and Electrical Propertiesmentioning
confidence: 99%
“…The modulus obtained for the electrospun wire was 2.3 GPa, in agreement with measurements on 300 nm thick fi lms of the same material. [ 39 ] A custom data-recording system consisting of a lock-in amplifi er (SR830, Standard Research Systems), a multiplexer (FixYourBoard.com, U802), and a laptop was used to capture opencircuit voltage data from the piezo-wires. An input reference signal of 1 kHz was set.…”
Section: Methodsmentioning
confidence: 99%
“…With fl exible and stretchable batteries, [66][67][68][69][70] processors, 71 and memory [72][73][74][75][76][77] becoming available, more complex devices with good electrical properties can be achieved using only fl exible devices, enabling entire systems with mechanical fl exibility throughout.…”
Section: Integrated Circuits and Systems On Foils Designmentioning
confidence: 99%