Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

“…1f, the built-in voltage, V bi , and the background charge density, N bg , can be extracted. From the series resistance obtained from the J-V characteristics of an 80-nm-thick IGZO Schottky diode, the free carrier density is 3.33 Â 10 13 cm À 3 , which is orders of magnitude lower than the background doping density, and 5.01 Â 10 16 cm À 3 due to the subgap traps in IGZO 12 . The energy-dispersive X-ray spectroscopy (EDX) measurement suggests that In/Ga/Zn ratio is 4.2:4.4:2.0 as shown in Supplementary Fig.…”

“…There have been highly desirable efforts to develop high-speed Schottky diodes based on metal-oxide semiconductors 10 , organic semiconductors [11][12][13][14] and conventional semiconductors [15][16][17] . Most of these were on glass substrates, for example, pentacene and C 60 pin diodes working as rectifiers up to 300 MHz 18 ; organic pentacene Schottky diodes operating up to 870 MHz 19 ; diodes based on C 60 and tungsten oxide showing a cut-off frequency of 800 MHz 20 .…”

Flexible transparent high-voltage diodes for energy management in wearable electronics

“…ZnO is a "rediscovered" semiconductor receiving remarkable interest on behalf of its unique merits and promising technological applications. Currently, the flexible diodes are all fabricated below 200 °C, using either low-temperature-synthesized oxide [27][28][29][30][31][32][33][34][35] and organic [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] materials or high-temperature-prepared Si [52][53][54][55][56][57][58][59][60][61][62][63] and Ge [64] materials combined with transfer method [65], as summarized in Figure 1. The highest reverse voltage or breakdown voltage (Vb) of these flexible diodes are no more than 20 V, with an exception in References 55 and 59 where flexible single-crystalline Si wafers (30 μm thick) were used as the active layers.…”

Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags

“…In recent years, the successful realization of ORDs has been achieved by using a wide range of organic semiconductors for instance pentacene [1][2][3], poly (3-hexylthiophen) (P3HT) [4,5], 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) [6][7][8] or fullerene-C60 [9]. In this context, the most promising results were reported with ORDs based on evaporated small molecule materials operating in the Ultra-High Frequency band [10,11].…”