2014
DOI: 10.1016/j.microrel.2014.07.050
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Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags

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Cited by 9 publications
(5 citation statements)
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“…When measured in N 2 , the Au/CuPc/PEIE/Au devices show a slightly lower RR of 1.8 × 10 6 and a current density of 1.8 A cm −2 . [ 7,8,14,[17][18][19][20][21] Compared with previous studies, our Au/ CuPc/PEIE/Au diode shows among the highest RRs and current densities, even though it is driven in ambient conditions. This can be attributed to the propensity of CuPc to be doped by O 2 .…”
contrasting
confidence: 52%
See 1 more Smart Citation
“…When measured in N 2 , the Au/CuPc/PEIE/Au devices show a slightly lower RR of 1.8 × 10 6 and a current density of 1.8 A cm −2 . [ 7,8,14,[17][18][19][20][21] Compared with previous studies, our Au/ CuPc/PEIE/Au diode shows among the highest RRs and current densities, even though it is driven in ambient conditions. This can be attributed to the propensity of CuPc to be doped by O 2 .…”
contrasting
confidence: 52%
“…The Au/CuPc/Al device, as measured in N 2 , yields similar characteristics to the Au/CuPc/PEIE/Au device as measured in N 2 – with an RR of 3.9 × 10 5 and a forward current density reaching 0.47 A cm −2 . Table S1 (Supporting Information) summarizes the characteristics of these devices, together with state of the art results . Compared with previous studies, our Au/CuPc/PEIE/Au diode shows among the highest RRs and current densities, even though it is driven in ambient conditions.…”
mentioning
confidence: 88%
“…ZnO is a "rediscovered" semiconductor receiving remarkable interest on behalf of its unique merits and promising technological applications. Currently, the flexible diodes are all fabricated below 200 °C, using either low-temperature-synthesized oxide [27][28][29][30][31][32][33][34][35] and organic [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51] materials or high-temperature-prepared Si [52][53][54][55][56][57][58][59][60][61][62][63] and Ge [64] materials combined with transfer method [65], as summarized in Figure 1. The highest reverse voltage or breakdown voltage (Vb) of these flexible diodes are no more than 20 V, with an exception in References 55 and 59 where flexible single-crystalline Si wafers (30 μm thick) were used as the active layers.…”
Section: Introductionmentioning
confidence: 99%
“…The current that flows back to the source electrode is undesirable, while the drain current contributes to the net ratchet effect. Such a mechanism of ratchet operation can be referred to as a charge pump …”
mentioning
confidence: 99%