Flexible transparent high-voltage diodes for energy management in wearable electronics

Zhang, Yonghui; Mei, Zengxia; Wang, Tao; Huo, Wenxing; Cui, Shujuan; Liang, Huili; Du, Xiaolong

doi:10.1016/j.nanoen.2017.08.025

Cited by 44 publications

(40 citation statements)

References 73 publications

(91 reference statements)

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“…With the development of new mechanisms for energyboosting and achievable form of a voltage (AC and DC) in TENG technology, the approaches for the stable and expectation charges could be discussed, such as the composite materials, the external circuit units (diode, switch, or charge pump), and the design of the mechanical structure (surface pattern and operation programming). [82][83][84][85][86][87][88][89][90][91][92][93][94]109,110 The TENG technology as power sources would dramatically drive the development trends of the era of the coming 5G and IoT. To help the readers to understand the development of the self-powered sensors in TENG technology, the multi-functional sensors (physical sensors, chemical/gas sensors, advanced designed multi-sensors) are discussed along with the energy harvesting as follows.…”

Section: From Energy To Self-powered Sensorsmentioning

confidence: 99%

“…As shown in Figure 2F, a self-enhancing conditioning circuit was reported for exponential amplification of the output electrical energy. 78,[90][91][92] The switch "on" and "off" are controlled by the foot motions when a human walks. With the aid of the conditioning circuit, the more complicated electrical system (with a combination of more diodes and switches in time sequence) for energy-boosting can be achieved as shown in Figure 2G.…”

Section: Mechanisms In Energy-boostingmentioning

confidence: 99%

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Progress inTENGtechnology—A journey from energy harvesting to nanoenergy and nanosystem

Zhu

Shi

et al. 2020

EcoMat

229

119

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Triboelectric nanogenerator (TENG) technology is a promising research field for energy harvesting and nanoenergy and nanosystem (NENS) in the aspect of mechanical, electrical, optical, acoustic, fluidic, and so on. This review systematically reports the progress of TENG technology, in terms of energy-boosting, emerging materials, self-powered sensors, NENS, and its further integration with other potential technologies. Starting from TENG mechanisms including the ways of charge generation and energy-boosting, we introduce the applications from energy harvesters to various kinds of self-powered sensors, that is, physical sensors, chemical/gas sensors. After that, further applications in NENS are discussed, such as blue energy, human-machine interfaces (HMIs), neural interfaces/implanted devices, and optical interface/wearable photonics. Moving to new research directions beyond TENG, we depict hybrid energy harvesting technologies, dielectric-elastomer-enhancement, self-healing, shape-adaptive capability, and self-sustained NENS and/or internet of things (IoT). Finally, the outlooks and conclusions about future development trends of TENG technologies are discussed toward multifunctional and intelligent systems.

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Section: From Energy To Self-powered Sensorsmentioning

confidence: 99%

Section: Mechanisms In Energy-boostingmentioning

confidence: 99%

Progress inTENGtechnology—A journey from energy harvesting to nanoenergy and nanosystem

Zhu

Shi

et al. 2020

EcoMat

229

119

View full text Add to dashboard Cite

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“…Applications of high-voltage (>100 V) electronics are growing in numbers in the fields of MEMS, 1 X-ray detectors, 2 solar cells, 3 and soft actuators such as dielectric elastomer actuators (DEAs). 4 Designing high-voltage components that can be integrated with these transducers, such as high-voltage diodes 5 or high-voltage thin film transistors (HVTFTs), [1][2][3][4][6][7][8][9][10] is critical to achieve more complex devices such as arrays, 1,4 displays, 3,4,6 or soft robots. 11,12 Integrated high-voltage electronics can replace the more traditional bulky optocouplers and power MOSFETs, which limit the compactness of arrays made of high voltage transducers.…”

mentioning

confidence: 99%

Yttrium zinc tin oxide high voltage thin film transistors

Marette

Shea

Briand

2018

Applied Physics Letters

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We demonstrate that doping the semiconductor zinc tin oxide (ZTO) with yttrium leads to a highvoltage thin film transistor (HVTFT) with enhanced switching performance. Adding 5% yttrium leads to an increase in the on-off ratio from 40 to 1000 at an operating voltage of 500 V and to a drop of the subthreshold swing from 65 to 35 V/dec. The performance is improved because of the reduction of the saturation voltage and because of a decrease in the off-current from several lA for undoped ZTO HVTFTs to 100 nA for Y 5% ZTO. The decrease in saturation voltage and off-current can be attributed to a lower trap concentration leading to enhanced space-charge limited current and to a decrease in the background charge carrier concentration. At a 500 V bias voltage, an inverter circuit with a yttrium-doped ZTO HVTFT can control the output voltage between 50 V and 500 V, while the undoped ZTO HVTFT can only control the output voltage between 150 V and 450 V. The improvement in high voltage performance of yttrium-doped ZTO HVTFTs is important for future work related to high voltage thin film transistors made of amorphous oxide semiconductors as it demonstrates that this technology enables HVTFTs with simultaneously high operation voltage, high on-current, and high on-off ratio.

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“…The current as a function of voltage is described by the diode equation, and the physics of p‐n junctions are detailed in many textbooks, such as Reference 195. The p‐n heterojunction is used in diodes, which can convert AC voltage (eg, from the mains or a triboelectric generator) to DC voltage through a rectifier circuit 196 . The key advantage of using wide band gap oxides, such as NiO x , is that the devices have high transmittance, enabling transparent electronics, which are important for wearable devices and displays 196 .…”

Section: Nickel Oxide Thin Films In Devicesmentioning

confidence: 99%

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Napari

Huq

Hoye

et al. 2020

InfoMat

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Nickel oxide (NiOx), a p‐type oxide semiconductor, has gained significant attention due to its versatile and tunable properties. It has become one of the critical materials in wide range of electronics applications, including resistive switching random access memory devices and highly sensitive and selective sensor applications. In addition, the wide band gap and high work function, coupled with the low electron affinity, have made NiOx widely used in emerging optoelectronics and p‐n heterojunctions. The properties of NiOx thin films depend strongly on the deposition method and conditions. Efficient implementation of NiOx in next‐generation devices will require controllable growth and processing methods that can tailor the morphological and electronic properties of the material, but which are also compatible with flexible substrates. In this review, we link together the fundamental properties of NiOx with the chemical processing methods that have been developed to grow the material as thin films, and with its application in electronic devices. We focus solely on thin films, rather than NiOx incorporated with one‐dimensional or two‐dimensional materials. This review starts by discussing how the p‐type nature of NiOx arises and how its stoichiometry affects its electronic and magnetic properties. We discuss the chemical deposition techniques for growing NiOx thin films, including chemical vapor deposition, atomic layer deposition, and a selection of solution processing approaches, and present examples of recent progress made in the implementation of NiOx thin films in devices, both on rigid and flexible substrates. Furthermore, we discuss the remaining challenges and limitations in the deposition of device‐quality NiOx thin films with chemical growth methods.

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Flexible transparent high-voltage diodes for energy management in wearable electronics

Cited by 44 publications

References 73 publications

Progress inTENGtechnology—A journey from energy harvesting to nanoenergy and nanosystem

Progress inTENGtechnology—A journey from energy harvesting to nanoenergy and nanosystem

Yttrium zinc tin oxide high voltage thin film transistors

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

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