Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Napari, Mari; Huq, Tahmida N.; Hoye, Robert L. Z.; MacManus‐Driscoll, Judith L.

doi:10.1002/inf2.12146

Cited by 62 publications

(41 citation statements)

References 239 publications

(852 reference statements)

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“…[45] The relative composition of Ni 2þ (Ni >2þ ) is known to be negatively (positively) correlated with the electrical conductivity in NiO x films. [11,15,46,47] We determined the compositions of Ni 2þ , Ni 2-3þ , and Ni >3þ by integrating the area of the deconvoluted curves in the main peak. The relative ratios are shown in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Serendipitous Doping in Nickel Oxide upon Microwave‐Induced Low‐Temperature Crystallization Enhances Efficiency of Perovskite Solar Cells

Hong

Kim

et al. 2021

Solar RRL

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Metal oxide semiconductors have been highlighted in recent decades owing to their versatility in a wide range of electronic and optoelectronic applications, such as photovoltaics, light-emitting diodes, thin-film transistors, and electrochromic and resistive switching memory devices. [1][2][3][4][5][6] While n-type conductivity can be achieved in various types of metal oxides, the candidate transition metals for p-type oxides are relatively limited for the use of transparent conducting layers toward efficient optoelectronic devices. Cuprous oxide (Cu 2 O) and tin mono-oxide (SnO) exhibit p-type characteristics with a delocalized electronic wavefunction at the valence band maximum (VBM), resulting from the hybridization of Cu 3d and Sn 5s with O 2p orbitals, respectively. [7][8][9][10] However, their phases can readily transform into low-bandgap (1.6 eV) cupric oxide (CuO) and n-type tin dioxide (SnO 2 ) at room temperature. [11] In contrast, nickel oxide (NiO x ) shows excellent stability under ambient conditions with respect to bandgap and electrical conductivity, allowing its utilization for hole transport layers in optoelectronic device applications including photovoltaics and light-emitting diodes. [12][13][14][15][16] The wide bandgap and energy levels of NiO x make it suitable as a hole transport layer, particularly in perovskite solar cells, enabling good hole collection and electron blocking. [17,18] However, strong interfacial recombination and shrinkage of quasi-Fermi-level splitting by a large mismatch in energy levels limit the open-circuit voltage (V oc ). [19][20][21]

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Section: Resultsmentioning

confidence: 99%

Serendipitous Doping in Nickel Oxide upon Microwave‐Induced Low‐Temperature Crystallization Enhances Efficiency of Perovskite Solar Cells

Hong

Kim

et al. 2021

Solar RRL

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“…The conductance of the particular barriers and quantum dots at higher temperatures is irrelevant, as the discreteness of neither the stages nor the charging energy is essential. The conductance does never fluctuate in response to the gate voltage [25]. For low-temperature characteristics, KT ≪ ΔE .…”

Section: Materials and Methodologymentioning

confidence: 99%

Investigations of Optical Coulomb Blockade Oscillations in Plasmonic Nanoparticle Dimers

Gudata¹,

Jule²,

Saka³

et al. 2022

International Journal of Photoenergy

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The exploration of Coulomb blockade oscillations in plasmonic nanoparticle dimers is the subject of this study. When two metal nanoparticles are brought together at the end of their journey, tunnelling current prevents an infinite connection dipolar plasmon and an infinite amplification in the electric fields throughout the hot spot in between nanoparticles from occurring. One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. The electron transport between the dot and source is considered. The model of study is the linear conductance skilled at describing the basic physics of electronic states in the quantum dot. The linear conductance through the dot is defined as G = lim ⟶ 0 I / V in the limit of infinity of small bias voltage. We discuss the classical and quantum metallic Coulomb blockade oscillations. Numerically, the linear conductance was plotted as a function gate voltage. The Coulomb blockade oscillation occurs as gate voltage varies. In the valleys, the conductance falls exponentially as a function gate voltage. As a result of our study, the conductance is constant at high temperature and does not show oscillation in both positive and negative gate voltages. At low temperature, conductance shows oscillation in both positive and negative gate voltages.

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“…The solution process is a commonly used method for depositing a wide range of metal oxides in thin films and different FIGURE 2 | Schematic illustrations of the energy bandgap of metal oxide charge transport materials and their carrier mobility (Jiang et al, 2018;Napari et al, 2020) in the bulk materials.…”

Section: Solution-process Methodsmentioning

confidence: 99%

Perspective on Predominant Metal Oxide Charge Transporting Materials for High-Performance Perovskite Solar Cells

Singh

Chu

2021

Front. Mater.

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Nowadays, the power conversion efficiency of organometallic mixed halide perovskite solar cells (PSCs) is beyond 25%. To fabricate highly efficient and stable PSCs, the performance of metal oxide charge transport layers (CTLs) is one of the key factors. The CTLs are employed in PSCs to separate the electrons and holes generated in the perovskite active layer, suppressing the charge recombination rate so that the charge collection efficiency can be increased at their respective electrodes. In general, engineering of metal oxide electron transport layers (ETLs) is found to be dominated in the research community to boost the performance of PSCs due to the resilient features of ETLs such as excellent electronic properties, high resistance to thermal temperature and moisture, ensuring good device stability as well as their high versatility in material preparation. The metal oxide hole transport layers in PSCs are recently intensively studied. The performance of PSCs is found to be very promising by using optimized hole transport materials. This review concisely discusses the evolution of some prevalent metal oxide charge transport materials (CTMs) including TiO2, SnO2, and NiOx, which are able to yield high-performance PSCs. The article begins with introducing the development trend of PSCs using different types of CTLs, pointing out the important criteria for metal oxides being effective CTLs, and then a variety of preparation methods for CTLs as employed by the community for high-performance PSCs are discussed. Finally, the challenges and prospects for future research direction toward scalable metal oxide CTM-based PSCs are delineated.

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Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Cited by 62 publications

References 239 publications

Serendipitous Doping in Nickel Oxide upon Microwave‐Induced Low‐Temperature Crystallization Enhances Efficiency of Perovskite Solar Cells

Serendipitous Doping in Nickel Oxide upon Microwave‐Induced Low‐Temperature Crystallization Enhances Efficiency of Perovskite Solar Cells

Investigations of Optical Coulomb Blockade Oscillations in Plasmonic Nanoparticle Dimers

Perspective on Predominant Metal Oxide Charge Transporting Materials for High-Performance Perovskite Solar Cells

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