Optical semiconductor devices [Book Review]

Fukuda, Mitsuo

doi:10.1109/mcd.2000.876906

Cited by 37 publications

(46 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…7 corresponds to only a few millielectronvolts in terms of energy. The most likely cause is the reduction of the QW bandgap at elevated temperature according to (11), as briefly discussed in [51].…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Liu

Choquette

et al. 2005

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Section: Simulation Results and Discussionmentioning

confidence: 99%

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Liu

Choquette

et al. 2005

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

“…On the other hand, high-quality AlGaInAs layers are relatively more difficult to obtain, and the reliability of Alcontaining lasers remains a concern [10,11]. In addition, Al alloys are prone to nonradiative surface recombination, which may elevate the lasing threshold current.…”

mentioning

confidence: 99%

Electrically pumped hybrid evanescent Si/InGaAsP lasers

et al. 2009

View full text Add to dashboard Cite

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-m-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15°C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm 2 . Continuous wave laser operation was obtained up to 45°C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

show abstract

“…The total dark current can be expressed in Equation (3) where I dd is the diffusion current, I dt is the tunneling current, I dg is the generation current and I ds is the surface leakage current (Ohnaka et al, 1987;Fukuda, 1999). The diffusion current ideally corresponds to the saturation current and is typically determined by the epitaxial layers and design.…”

Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

View full text Add to dashboard Cite

Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

show abstract

Optical semiconductor devices [Book Review]

Cited by 37 publications

References 0 publications

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Electrically pumped hybrid evanescent Si/InGaAsP lasers

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Contact Info

Product

Resources

About