Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers

Numerical model for small-signal modulation response in vertical-cavity surface-emitting lasers

“…In the simulations we assumed C = 3 • 10 −29 cm 6 /s at 300 K with a linear dependence on temperature dC/dT = 3 • 10 −31 cm 6 /(sK). The value assumed lies within the range of the values for active regions emitting at 980 nm reported in the literature [33,34]. The value of the output power depends also on material absorption in the layers of the laser.…”

Optimization of Bragg reflectors in AlGaAs/GaAs VCSELs

“…0 that is immediately solved by applying the singular value decomposition [9]. The dielectric function takes into account the optical gain and losses in the active region, and the carrier-dependent absorption loss as α abs = (c/n ef f,m )|E m | 2 (k n n + k p p), being k n and k p the coefficients related to free carrier and inter-valence absorption losses [10].…”

High‐Performance Thin‐Film VCSELs Integrated with a Copper‐Plated Heatsink

“…[8,9] However, the most significant hurdle to the high-power and reliable VCSELs is a self-heating effect around the active region under high-current operation, which deteriorates the achievable maximum device performance with premature rollover current as well as device reliability due to the thermally-induced unstable emission spectrum. [10][11][12][13][14][15] It is crucial to manage the self-heating effect during the device operation in that the temperature rise around the active region induced by the current injection is much higher than the ambient temperatures. [16] The device lifetime could be significantly limited by a factor of two for every temperature rise of 10 °C.…”