Optical and Structural Study of CuSe and CuSe/In Thin Films

Montes-Monsalve, Jorge; Bernal-Correa, Roberto; Mora, Alvaro Pulzara

doi:10.1088/1742-6596/480/1/012024

Cited by 7 publications

(12 citation statements)

References 9 publications

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“…The bad gap values for the non-annealed and pre-annealed films were ~2.2 and ~2.15 eV, respectively. Such values are consistent with earlier literature [6]. The band gap showed only little shift (0.05 eV) by annealing at 150 o C. This indicates lack of nanoparticle growth at this temperature.…”

Section: Cuse Film Characterizationsupporting

confidence: 93%

“…The Cu I ions behave as electron dopants to the film, and are the reason for the n-type behavior. Figure (7) shows effect of CuSe electrode annealing on its photo J-V plots, measured at room temperature in aqueous Fe(CN) 6 3-/Fe(CN) 6 2-/LiClO 4 system. The results are summarized in Table (1), entries (1)(2).…”

Section: Photo J-v Studymentioning

confidence: 99%

“…Efforts have been made to enhance conversion efficiencies and stabilities of film electrodes in PEC processes by different methods of modifications. CuSe films are one example of metal-chalcogenide based thin films with high expectations and wide applications [6]. With a band gap range (2.1-2.3 eV) that suites visible solar energy, CuSe films are expected to be useful electrodes in PEC processes.…”

Section: Introductionmentioning

confidence: 99%

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High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

Zyoud

Al-Kerm

et al. 2015

Electrochimica Acta

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Section: Cuse Film Characterizationsupporting

confidence: 93%

Section: Photo J-v Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

Zyoud

Al-Kerm

et al. 2015

Electrochimica Acta

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“…Graph of total charge passed during chronocoulometry vs literature direct band gap data. − Chronocoulometry was carried out at a constant potential of 1.2 V for 1800 s.…”

Section: Resultsmentioning

confidence: 99%

A Unified Method for the Recovery of Metals from Chalcogenides

Bevan

Galeb

Black

et al. 2021

ACS Sustainable Chem. Eng.

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Metal chalcogenides are ubiquitous starting materials for the extraction of metals from both primary and secondary sources. In this study, it is shown that chalcogenide compounds are electrochemically active and can be solubilized from solid powders by electrochemical oxidation in a deep eutectic solvent. Importantly, the metal ions released into solution were unaffected by the type of chalcogenide present in the initial compound, maintaining the same speciation as would be obtained from dissolution of a chloride salt. Therefore, metals can be recovered by the same process from mixtures of chalcogenides. The chalcogenides form a mixture of oxyanions in the + IV and + VI oxidation states, which are separable via standard processes.

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“…The band gaps of ZnSe and CuSe were found to be 2.7 and 2.2 eV, respectively. 35,36 Because of the presence of these impurities, the band gap energy of the AZTSe deposited on conductive substrates increases by about 23% than that of the AZTSe thin films deposited on glass substrates. At the same time, the presence of impurities SnSe (1.3−1.7 eV) and SnSe 2 (1.6 eV) does not affect the band gap of the AZTSe.…”

Section: Resultsmentioning

confidence: 99%

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

2019

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This work describes the photoelectrochemical (PEC) performance of Ag 2 ZnSnSe 4 (AZTSe) thin films prepared on various conductive substrates such as Al, Cu, Ag, and conventional glass by a thermal evaporation method. The X-ray diffraction analysis confirms that the deposited films are the pure tetragonal structure of AZTSe. The scanning electron microscope (SEM) images show polygonal-shaped and spherical-rich particles, which are uniformly distributed over the substrates and are densely packed. By comparing the SEM images, the average particle size of Ag/AZTSe film seems to be higher than that of the other films. The energy-dispersive X-ray analysis is witnessed for nearly stoichiometric values for the films. The optical absorption coefficient of AZTSe thin films is found to be about 10 4 cm −1 and its band gap is found in the range of 1.54−2.15 eV. The Mott−Schottky plot shows n-type conductivity for all of the films. The J−V plot confirms the photoactivity for all of the films. Among the films, the Ag/AZTSe film shows higher power conversion efficiency of about 0.32%. However, further investigation is needed to optimize the thickness of the conductive layer for improving the efficiency of photoelectrochemical cell in comparison to that of the industrially established materials.

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Optical and Structural Study of CuSe and CuSe/In Thin Films

Cited by 7 publications

References 9 publications

High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

A Unified Method for the Recovery of Metals from Chalcogenides

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

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Optical and Structural Study of CuSe and CuSe/In Thin Films

Cited by 7 publications

References 9 publications

High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

High PEC conversion efficiencies from CuSe film electrodes modified with metalloporphyrin/polyethylene matrices

A Unified Method for the Recovery of Metals from Chalcogenides

Influence of Substrates on the Photoelectrochemical Performances of Ag2ZnSnSe4 Thin Films

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Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films