Optical and Electrical Properties of Ga2Te3 Crystals

Abstract

Optical and electrical properties of the gallium telluride Ga2Te3 are reported. Lattice modes are investigated using far‐infrared spectroscopy and polarized Raman scattering experiments. The farinfrared reflectivity spectrum which is analyzed using a Lorentzian‐oscillator model and the Raman spectrum shows that this compound has a defect structure with disordered vacancies. Modes with A‐symmetry are observed at 86 and 112 cm−1. The semiconducting character is evidenced by electrical studies and the sensitive behavior to normal atmosphere is observed in the electrical conductivity of a sample maintained in air.

Telluroether and Selenoether Complexes as Single Source Reagents for Low Pressure Chemical Vapor Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films

“…The Raman spectrum (Supporting Information) of the as-deposited film shows peaks in accord with the literature data for Ga 2 Te 3 …”

“…26 X-ray diffraction measurements also confirm the crystallinity of the deposited film, and the diffraction pattern ( Figure 3) is in accord with that of cubic Ga 2 Te 3 (F4̅ 3m); indexing and refining the peaks gives a lattice parameter, a = 5.8913(8) Å (literature data from ICSD: a = 5.886(5), 5.896(3) Å 27 ).…”

“…The effect of the arrangement of the vacancies in the crystal structure (see X-ray diffraction) might also play a role. Hence, there is a large spread in thin film data in the literature . The nonuniformity of Ga 2 Se 3 film is also relevant, and hence our data for the Ga 2 Se 3 are indicative rather than authorative.…”

Electronic structure and properties of layered gallium telluride

“…Additionally, GaTe nanosheets seem to possess high carrier mobility and long carrier lifetimes [23]. In view of the interesting properties with potential applications in water splitting and other areas [23][24][25][26], we undertaken the systematic investigation of layerdependent electronic structure and properties of GaTe by using a combination of firstprinciples calculations and an experimental determination of some of the properties of GaTe,…”

First-principles study of the structure and band structure of Ga2Se3

“…The ternary Ga 2 (Se x Te 1−x ) 3 system was recently proposed to obtain an appropriate bandgap [4]. The reported bandgaps of Ga 2 Te 3 and Ga 2 Se 3 are 1.0-1.2 eV [5][6][7][8][9][10][11] and 2.0-2.6 eV [12,13], respectively. Complete solid solutions of Ga 2 Se 3 and Ga 2 Te 3 throughout the whole range of composition have been reported to be practically obtained [14,15], although solid state immiscibility has also been reported under certain conditions [16].…”