1994
DOI: 10.1002/pssa.2211450119
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Optical and Electrical Properties of Ga2Te3 Crystals

Abstract: Optical and electrical properties of the gallium telluride Ga2Te3 are reported. Lattice modes are investigated using far‐infrared spectroscopy and polarized Raman scattering experiments. The farinfrared reflectivity spectrum which is analyzed using a Lorentzian‐oscillator model and the Raman spectrum shows that this compound has a defect structure with disordered vacancies. Modes with A‐symmetry are observed at 86 and 112 cm−1. The semiconducting character is evidenced by electrical studies and the sensitive b… Show more

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Cited by 17 publications
(8 citation statements)
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“…The Raman spectrum (Supporting Information) of the as-deposited film shows peaks in accord with the literature data for Ga 2 Te 3 …”
Section: Results and Discussionsupporting
confidence: 82%
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“…The Raman spectrum (Supporting Information) of the as-deposited film shows peaks in accord with the literature data for Ga 2 Te 3 …”
Section: Results and Discussionsupporting
confidence: 82%
“…26 X-ray diffraction measurements also confirm the crystallinity of the deposited film, and the diffraction pattern ( Figure 3) is in accord with that of cubic Ga 2 Te 3 (F4̅ 3m); indexing and refining the peaks gives a lattice parameter, a = 5.8913(8) Å (literature data from ICSD: a = 5.886(5), 5.896(3) Å 27 ).…”
Section: Resultssupporting
confidence: 64%
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“…Additionally, GaTe nanosheets seem to possess high carrier mobility and long carrier lifetimes [23]. In view of the interesting properties with potential applications in water splitting and other areas [23][24][25][26], we undertaken the systematic investigation of layerdependent electronic structure and properties of GaTe by using a combination of firstprinciples calculations and an experimental determination of some of the properties of GaTe,…”
Section: Introductionmentioning
confidence: 99%
“…The ternary Ga 2 (Se x Te 1−x ) 3 system was recently proposed to obtain an appropriate bandgap [4]. The reported bandgaps of Ga 2 Te 3 and Ga 2 Se 3 are 1.0-1.2 eV [5][6][7][8][9][10][11] and 2.0-2.6 eV [12,13], respectively. Complete solid solutions of Ga 2 Se 3 and Ga 2 Te 3 throughout the whole range of composition have been reported to be practically obtained [14,15], although solid state immiscibility has also been reported under certain conditions [16].…”
Section: Introductionmentioning
confidence: 99%