The distorted octahedral complexes [SnCl4{ n BuSe­(CH2) n Se n Bu}] (n = 2 or 3), (1) and (2), obtained from reaction of SnCl4 with the neutral bidentate ligands and characterized by IR/Raman and multinuclear (1H, 77Se­{1H} and 119Sn) NMR spectroscopy and X-ray crystallography, serve as very effective single source precursors for low pressure chemical vapor deposition (LPCVD) of microcrystalline, single phase tin diselenide films onto SiO2, Si and TiN substrates. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) imaging show hexagonal plate crystallites which grow perpendicular to the substrate surface in the thicker films, but align mostly parallel to the surface when the quantity of reagent is reduced to limit the film thickness. X-ray diffraction (XRD) and Raman spectroscopy on the deposited films are consistent with hexagonal SnSe2 (P3̅m1; a = b = 3.81 Å; c = 6.13 Å), with strong evidence for preferred orientation of the crystallites in thinner (0.5–2 μm) samples, consistent with crystal plate growth parallel to the substrate surface. Hall measurements show the deposited SnSe2 is a n-type semiconductor. The resistivity of the crystalline films is 210 (±10) mΩ cm and carrier density is 5.0 × 1018 cm–3. Very highly selective film growth from these reagents onto photolithographically patterned substrates is observed, with deposition strongly preferred onto the (conducting) TiN surfaces of SiO2/TiN patterned substrates, and onto the SiO2 surfaces of Si/SiO2 patterned substrates. A correlation between the high selectivity and high contact angle of a water droplet on the substrate surfaces is observed.

Reaction of SnF2 in MeOH with the appropriate neutral N- or O-donor ligands produces [SnF(2,2'-bipy)]2SnF6, [SnF(1,10-phen)]2SnF4 and [SnF2(L)] L = Me3PO, dmso or pyNO). The X-ray structures of [SnF(2,2'-bipy)]2SnF6, [SnF(1,10-phen)]2SnF4 and [SnF2(dmso)], reveal trigonal pyramidal Sn(II) cores with longer fluorine bridges completing distorted 5- or 6-coordination. Attempts to prepare SnF2 adducts with various phosphine or diphosphine ligands in MeCN failed, whilst in CH2Cl2 solution complex reactions involving the solvent occurred. The NHC, 1,3-(2,6-di-isopropylphenyl)imidazol-2-ylidene (IDiPP) and SnF2 produced the imidazolium salt, [IDiPPH]SnF3, the crystal structure of which revealed the first example of a discrete trifluorostannate(II) ion. In contrast, diphosphine complexes of tin(II) chloride formed readily, including [SnCl2{Me2P(CH2)2PMe2}], [SnCl2{o-C6H4(PMe2)2}], [SnCl2{o-C6H4(PPh2)2}] and [(SnCl2)2(μ-Ph2P(CH2)2PPh2)], which were characterised by X-ray crystallography. The structures of [SnCl2{Me2P(CH2)2PMe2}] and [SnCl2{o-C6H4(PMe2)2}] reveal chloride-bridged dimers, but [SnCl2{o-C6H4(PPh2)2}], although also dimeric, has very asymmetric diphosphine coordination best described as κ(1). The structures of [(SnCl2)2(μ-Ph2P(CH2)2PPh2)] and of [SnCl{o-C6H4(AsMe2)2}]SnCl3 reveal trigonal pyramidal cores, but with longer Sn···Cl bridges affording polymeric structures. The synthesis of [SnCl2(R3EO)2] (R = Ph, E = P or As; and R = Me, E = P) are also reported, along with the structure of [SnCl2(Me3PO)2], which contains distorted tetragonal pyramidal Sn(II) coordination. X-ray structures are also reported for [(PMe3)2CH2][SnCl3]2 and [Ph2P(H)(CH2)2P(H)Ph2][SnCl3]2, obtained as by-products from the attempts to synthesise phosphine complexes, as well as [(o-C6H4(PMe2)2CH2]I2. All complexes were characterised by microanalysis, IR and multinuclear NMR spectroscopy ((1)H, (19)F{(1)H}, (31)P{(1)H } and, where solubility allowed, (119)Sn). Comparisons are drawn with corresponding Sn(IV) and Ge(II) complexes.

The indium(III) halo-bridged octahedral dimers [InX(2)(L-L)(mu-X)(2)InX(2)(L-L)] (X = Cl: L-L = MeS(CH(2))(2)SMe, MeSe(CH(2))(2)SeMe, (n)BuSe(CH(2))(2)Se(n)Bu), the ionic trans-[InX(2)(L-L)(2)][InX(4)] (X = Cl: L-L = (i)PrS(CH(2))(2)S(i)Pr; X = Br: L-L = MeS(CH(2))(2)SMe, (i)PrS(CH(2))(2)S(i)Pr, MeSe(CH(2))(2)SeMe), cis-[InCl(2)(thiamacrocycle)][InCl(4)] (thiamacrocycle = [12]aneS(4) or [14]aneS(4)) and the neutral, octahedral [InCl(3)([9]aneS(3))] and [InCl(3){MeC(CH(2)SMe)(3)}] were obtained in good yield by the reaction of 1:1 molar ratios of InX(3) with the ligand in anhydrous CH(2)Cl(2) solution. The distorted tetrahedral [InX(3)(Me(2)Se)] (X = Cl, Br or I) and [InX(3)(Me(2)Te)] (X = Br or I) were obtained from 1:3 and 1:2 molar ratios respectively of InX(3) and Me(2)E (E = Se or Te) also in CH(2)Cl(2). The ligand-bridged, distorted tetrahedral dimers [(InCl(3))(2){micro(2)-o-C(6)H(4)(CH(2)SMe)(2)}] and [(InCl(3))(2){micro(2)-MeTe(CH(2))(3)TeMe}] are formed even from a 1:1 In:ligand ratio. Key structure types were confirmed from crystal structures of [InCl(2){RSe(CH(2))(2)SeR}(micro-Cl)(2)InCl(2){RSe(CH(2))(2)SeR(2)}] (R = Me or (n)Bu), trans-[InX(2){(i)PrS(CH(2))(2)S(i)Pr}(2)][InX(4)] (X = Cl or Br), trans-[InBr(2){MeSe(CH(2))(2)SeMe}(2)][InBr(4)], cis-[InCl(2)([14]aneS(4))][InCl(4)] and [InBr(3)(Me(2)Se)]. The bulk complexes have been characterised by IR and Raman spectroscopy and microanalyses, while (1)H, (77)Se{(1)H} and (125)Te{(1)H} NMR spectroscopy show that the compounds are extremely labile in solution and undergo rapid dynamic exchange equilibria. Comparisons are drawn between these structurally rather diverse In(III) chalcogenoether complexes and the corresponding Ga(III) species (all of which are neutral and involve distorted tetrahedral coordination). The reaction of TlCl(3) with Me(2)E (E = Se or Te) shows that chlorination of Me(2)E rather than adduct formation occurs, while no reaction occurred between TlCl(3) and Me(2)S, consistent with Tl(III) being a very poor Lewis acid.

The reactions of GaX3 (X = Cl, Br or I) with SMe2, SeMe2 and TeMe2 (L) in non-coordinating solvents produces only the pseudo-tetrahedral [GaX3L], which have been characterised by IR, Raman and multinuclear NMR (1H, 71Ga, 77Se or 125Te) spectroscopy, and by the crystal structure of [GaCl3(SeMe2)]. The 71Ga NMR resonances show small low frequency shifts for fixed halides as the neutral donors change from S --> Se --> Te. Bidentate ligands including MeS(CH2)2SMe, PhS(CH2)2SPh, MeSe(CH2)2SeMe, nBuSe(CH2)2Se(n)Bu and MeTe(CH2)3TeMe (L-L) also produce complexes with 4-coordinate gallium centres, [(GaX3)2(mu-L-L)], confirmed by the crystal structures of [(GaI3)2(mu-MeS(CH2)2SMe)], [(GaCl3)2(mu-PhS(CH2)2SPh)] and [(GaCl3)2(mu-nBuSe(CH2)2Se(n)Bu)]. The structural data are consistent with the weaker Lewis acidity of the gallium as the halide co-ligands become heavier. Multinuclear NMR studies suggest that in chlorocarbon solutions partial dissociation of the ligands occur, which increases with the halide co-ligand Cl < Br < I. The o-xylyl dithioether, o-C6H4(CH2SMe)2, despite being pre-organised for chelation, also forms [(GaCl3)2(mu-L-L)]. The corresponding diselenoether complex decomposes in solution with C-Se bond cleavage to form the selenonium salt [o-C6H4CH2Se(Me)CH2][GaCl4], which was structurally characterised. The ditelluroether o-C6H4(CH2TeMe)2 undergoes rapid C-Te bond fission and rearrangement upon reaction with GaCl3, and the telluronium species [o-C6H4CH2Te(Me)CH2]+ and [MeTe(CH2(o-C6H4)CH2TeMe)2]+ have been identified by ES+ mass spectrometry from their characteristic isotope patterns.

A series of pentavalent niobium and tantalum halide complexes with thio-, seleno- and telluro-ether ligands, [MCl5(E(n)Bu2)] (M = Nb, Ta; E = S, Se, Te), [TaX5(TeMe2)] (X = Cl, Br, F) and the dinuclear [(MCl5)2{o-C6H4(CH2SEt)2}] (M = Nb, Ta), has been prepared and characterised by IR, (1)H, (13)C{(1)H}, (77)Se, (93)Nb and (125)Te NMR spectroscopy, as appropriate, and microanalyses. Confirmation of the tantalum(V)-telluroether coordination follows from the crystal structure of [TaCl5(TeMe2)], which represents the highest oxidation state transition metal complex with telluroether coordination structurally authenticated. The Ta(V) monotelluroether complexes are much more stable than the Nb(V) analogues. In the presence of TaCl5 the ditelluroether, CH2(CH2Te(t)Bu)2, is decomposed; one of the products is the dealkylated [(t)BuTe(CH2)3Te][TaCl6], whose structure was determined crystallographically. Crystal structures of [(MCl5)2{o-C6H4(CH2SEt)2}] (M = Nb, Ta) show ligand-bridged species. The complexes bearing β-hydrogen atoms on the terminal alkyl substituents have also been investigated as single source reagents for the deposition of ME2 thin films via low pressure chemical vapour deposition. While the tantalum complexes proved to be unsuitable, the [NbCl5(S(n)Bu2)] and [NbCl5(Se(n)Bu2)] deposit NbS2 and NbSe2 as hexagonal platelets onto SiO2 substrates at 750 °C and 650 °C, respectively. Grazing incidence and in-plane X-ray diffraction confirm both materials adopt the 3R-polytype (R3mh), and the sulfide shows preferred orientation with the crystallites aligned predominantly with the c axis perpendicular to the substrate. Scanning electron microscopy and Raman spectra are consistent with the X-ray data.

† Electronic supplementary information (ESI) available: Details of substrate preparation and characterisation of the Bi 2 Te 3 thin lms; thermogravimetric analysis (TGA) of [BiCl 3 (Te n Bu 2) 3 ], SEM images of thin lms of Bi 2 Te 3 , Raman analysis of Bi 2 Te 3 thin lms, WDX compositional analysis of Bi 2 Te 3 thin lms, and microfocus and pole gure XRD analysis of micro-scale Bi 2 Te 3 arrays, lattice parameters rened for Bi 2 Te 3 grown on different substrates. See

The neutral complexes [GaCl 3 (E n Bu 2 )] (E = Se or Te), [(GaCl 3 ) 2 { n BuE(CH 2 ) n E n Bu}] (E = Se, n = 2; E = Te, n = 3), and [(GaCl 3 ) 2 { t BuTe(CH 2 ) 3 Te t Bu}] are conveniently prepared by reaction of GaCl 3 with the neutral E n Bu 2 in a 1:1 ratio or with n BuE(CH 2 ) n E n Bu or t BuTe(CH 2 ) 3 Te t Bu in a 2:1 ratio and characterized by IR/Raman and multinuclear ( 1 H, 71 Ga, 77 Se-{ 1 H}, and 125 Te{ 1 H}) NMR spectroscopy, respectively, all of which indicate distorted tetrahedral coordination at Ga. The tribromide analog, [GaBr 3 (Se n Bu 2 )], was prepared and characterized similarly. A crystal structure determination on [(GaCl 3 ) 2 { t BuTe(CH 2 ) 3 Te t Bu}] confirms this geometry with each pyramidal GaCl 3 fragment coordinated to one Te donor atom of the bridging ditelluroether, Ga−Te = 2.6356(13) and 2.6378(14) Å. The n Bu-substituted ligand complexes serve as convenient and very useful single source precursors for low pressure chemical vapor deposition (LPCVD) of single phase gallium telluride and gallium selenide, Ga 2 E 3 , films onto SiO 2 and TiN substrates. The composition and morphology were confirmed by SEM, EDX, and Raman spectroscopy, while XRD shows the films are crystalline, consistent with cubic Ga 2 Te 3 (F4̅ 3m) and monoclinic Ga 2 Se 3 (Cc), respectively. Hall measurements on films grown on SiO 2 show the Ga 2 Te 3 is a p-type semiconductor with a resistivity of 195 ± 10 Ω cm and a carrier density of 5 × 10 15 cm −3 , indicative of a close to stoichiometric compound. The Ga 2 Se 3 is also p-type with a resistivity of (9 ± 1) × 10 3 Ω cm, a carrier density of 2 × 10 13 cm −3 , and a mobility of 20−80 cm 2 / V·s. Competitive deposition of Ga 2 Te 3 onto a photolithographically patterned SiO 2 /TiN substrate indicates that film growth onto the conducting and more hydrophobic TiN is preferred.

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition.