Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors

Groot, C. H. de; Gurnani, Chitra; Hector, Andrew L.; Huang, Ruomeng; Jura, Marek; Levason, William; Reid, Gillian

doi:10.1021/cm302864x

Cited by 64 publications

(73 citation statements)

References 50 publications

(56 reference statements)

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“…10 The SEM images suggest that the average size (in x – y plane) of individual TiSe 2 crystallites varies from ∼1.2 μm (within 100 μm TiN holes) to ∼600 nm (within 2 μm TiN holes).…”

Section: Results and Discussionmentioning

confidence: 97%

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Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition

Benjamin¹,

Groot²,

Gurnani³

et al. 2013

Chem. Mater.

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The neutral, distorted octahedral complex [TiCl4(SenBu2)2] (1), prepared from the reaction of TiCl4 with the neutral SenBu2 in a 1:2 ratio and characterized by IR and multinuclear (1H, 13C{1H}, 77Se{1H}) NMR spectroscopy and microanalysis, serves as an efficient single-source precursor for low-pressure chemical vapor deposition (LPCVD) of titanium diselenide, TiSe2, films onto SiO2 and TiN substrates. X-ray diffraction patterns on the deposited films are consistent with single-phase, hexagonal 1T-TiSe2 (P3̅m1), with evidence of some preferred orientation of the crystallites in thicker films. The composition and structural morphology was confirmed by scanning electron microscopy (SEM), energy dispersive X-ray, and Raman spectroscopy. SEM imaging shows hexagonal plate crystallites growing perpendicular to the substrate, but these tend to align parallel to the surface when the quantity of reagent is reduced. The resistivity of the crystalline TiSe2 films is 3.36 ± 0.05 × 10–3 Ω·cm with a carrier density of 1 × 1022 cm–3. Very highly selective film growth from the reagent was observed onto photolithographically patterned substrates, with film growth strongly preferred onto the conducting TiN surfaces of SiO2/TiN patterned substrates. TiSe2 is selectively deposited within the smallest 2 μm diameter TiN holes of the patterned TiN/SiO2 substrates. The variation in crystallite size with different diameter holes is determined by microfocus X-ray diffraction and SEM, revealing that the dimensions increase with the hole size, but that the thickness of the crystals stops increasing above ∼20 μm hole size, whereas their lengths/widths continue to increase.

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Section: Results and Discussionmentioning

confidence: 97%

“…10 Selective growth specifically within small conductive TiN features on the micrometer/submicrometer diameter is a very attractive prospect for a number of applications in the electronic industry, including phase change memory materials and thermoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition

Benjamin¹,

Groot²,

Gurnani³

et al. 2013

Chem. Mater.

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“…From Figure S2b, two Raman active modes at 115 and 183.5 cm −1 are observed which belong to SnSe 2 hexagonal phase 6,10,19,25,27,28 . The peak at 115 cm −1 is for E g mode and is due to in-plane strecthing, while the peak located at 183.5 cm −1 is for A 1g mode due to out of plane stretching of selenium atoms 29 .…”

Section: Resultsmentioning

confidence: 99%

“…SnSe 2 thin films have been prepared by spin coating 20,21 , spray pyrolysis 14,22,23 , chemical vapour deposition(CVD) 15,18 , molecular beam epitaxy 10 , thermal evaporation of Sn and Se elements 24 , and sputtering 25 . Here, we deposited Sn films of various thicknesses on soda lime glass (SLG) substrate and annealed the films in selenium atmosphere for 1 h at 450 °C to obtain hexagonal SnSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

Mukhokosi

Krupanidhi

2017

Sci Rep

114

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We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV similar to that of bulk for the 1200 nm thick film. The variation of the band gap is consistent with the the theoretically predicted layer-dependent band gap of SnSe2. Interestingly, the 400–1200 nm thick films were sensitiveto 1064 nm laser iradiation and the sensitivity increases almost exponentiallly with thickness, while films with 50–140 nm thick are insensitive which is due to the fact that the band gap of thinner films is greater than the energy corresponding to 1064 nm. Over all, our results establish the possibility of engineering the band gap of SnSe2 layered structures by simply controlling the thickness of the film to absorb a wide range of electromagnetic radiation from infra-red to visible range.

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“…The design of suitable precursors that can undergo clean decomposition processes is essential in the development of selenides as functional materials. 9,[38][39][40][41] A thermogravimetric study of complexes 1-3 was carried out to further probe the suitability of complexes of this type as CVD precursors. Although complexes 4 and 5 can be synthesized through the same tandem synthetic route, their isolation requires a more complicated process, making them less adequate precursors for CVD of iron-intercalated TMDs and thus were not further investigated.…”

Section: Resultsmentioning

confidence: 99%

Macrocycles containing 1,1′-ferrocenyldiselenolato ligands on group 4 metallocenes

et al. 2018

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were prepared and characterized by 77 Se NMR spectroscopy and the crystal structures of 1-3 and 5 were determined by single-crystal X-ray diffraction. The crystal structure of 4 is known and the complex is isomorphous with 5. 1-5 form mutually similar macrocyclic tetranuclear complexes in which the alternating Fe(C 5 H 4 Se) 2 and M(C 5 H 4 R) 2 centers are linked by selenium bridges. The thermogravimetric analysis (TGA) of 1-3 under a helium atmosphere indicated that the complexes undergo a two-step decomposition upon heating. The final products were identified using powder X-ray diffraction as Fe x MSe 2 , indicating their potential as single-source precursors for functional materials.

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Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors

Cited by 64 publications

References 50 publications

Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition

Area Selective Growth of Titanium Diselenide Thin Films into Micropatterned Substrates by Low-Pressure Chemical Vapor Deposition

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

Macrocycles containing 1,1′-ferrocenyldiselenolato ligands on group 4 metallocenes

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