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Optical and electrical properties of the gallium telluride Ga2Te3 are reported. Lattice modes are investigated using far‐infrared spectroscopy and polarized Raman scattering experiments. The farinfrared reflectivity spectrum which is analyzed using a Lorentzian‐oscillator model and the Raman spectrum shows that this compound has a defect structure with disordered vacancies. Modes with A‐symmetry are observed at 86 and 112 cm−1. The semiconducting character is evidenced by electrical studies and the sensitive behavior to normal atmosphere is observed in the electrical conductivity of a sample maintained in air.

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