Electronic structure and properties of layered gallium telluride

Band gap tuning of layered III-Te materials

“…13 As one of the most representative members of the planar low-symmetry 2D materials, 14 this semiconductor has won much attention in the recent years. 10,15,16 With a moderate direct band gap of $1.7 eV, responsible for its high absorption coefficient and efficient electron-hole pair generation under photoexcitation, GaTe has demonstrated to have high photoresponsivity and small response times in photodetectors. Among its several possible applications solar cells, radiation detectors and thermoelectric devices 14,[17][18][19][20][21][22] are particularly promising.…”

Lattice Dynamics and Thermodynamic Properties of Bulk Phases and Monolayers of GaTe and InTe: A Comparison from First‐Principles Calculations

“…Few‐layer GaTe flakes and thin films have been obtained experimentally since the late 90′s, [40] but have been studied most intensively in the past few years [41–46] . Many technics can be used for the synthesis of nano‐sized objects.…”

“…The main difference between hβ and rα layers is that all M−M chemical bonds are directed perpendicular to the hβ monolayer plane, while the M−M bonds roughly parallel to the layer plane also exist in the rα monolayer (see Figure 2c). The comparison between hα ‐ and rα ‐GaTe monolayers′ properties has been performed in several works [41,42,48] . First‐principles calculations [41,48] of electronic properties of these monolayers have shown that both structures are intermediate‐gap semiconductors with a similar band‐gap.…”

“…The comparison between hα ‐ and rα ‐GaTe monolayers′ properties has been performed in several works [41,42,48] . First‐principles calculations [41,48] of electronic properties of these monolayers have shown that both structures are intermediate‐gap semiconductors with a similar band‐gap. Moreover, the hα ‐monolayer is an indirect band‐gap semiconductor, while the rα ‐monolayer reveals a direct band‐gap.…”

Synthesis and Physicochemical Properties of Two-Dimensional Gallium Sulfide Crystals

“…2D materials, such as MoS2, [5,6] WSe2, [7] stack as thin layered crystals, intriguing huge research ranging from sensing [8,9] to energy applications [10]. In addition to them, the group III-VI semiconducting nanosheets (NS) in particular, have been viewed as promising candidates for ultrathin and flexible optoelectronic devices and also for energy storage device [11][12][13]. For example, layered metal chalcogenides (MC, M=Ga, In, Ta; C=S, Se, Te) NS exhibit remarkable mechanical, thermal, anisotropic optical and electronic advantages [14][15][16].…”