Optical analysis of dislocation‐related physical processes in GaN‐based epilayers

Jiang, Desheng; Zhao, Degang; Yang, Hui

doi:10.1002/pssb.200675604

Cited by 14 publications

(12 citation statements)

References 43 publications

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“…The weaker blue emission peak at 390 nm can be attributed to the transition from a shallow donor state to a shallow acceptor state involving defect levels or residual impurities [22,23]. The peak at 532 nm corresponds to the well-known "yellow" emission band associated with the existence of defect or surface states [24,25]. It should be noted that the near band emission of GaN cannot be observed, which may result from overlap with the broad blue emission peak at 390 nm.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Meng

Zhu

et al. 2009

Nano Res.

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Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on a -LiAlO 2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [10 ] direction with steeply tapering tips, and have triangular cross-sections with widths of 50 100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor liquid solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.

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Section: Resultsmentioning

confidence: 99%

Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Meng

Zhu

et al. 2009

Nano Res.

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“…12 All nanowires reported in this study were grown by metalorganic chemical vapor deposition (MOCVD), as previously reported. 6,13 First, we investigated the overall optical properties of individual GaN/AlGaN core-shell (CS) nanowires.…”

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confidence: 99%

Direct Correlation between Structural and Optical Properties of III−V Nitride Nanowire Heterostructures with Nanoscale Resolution

et al. 2009

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Direct correlation of structural and optical properties on the nanoscale is essential for rational synthesis of nanomaterials with predefined structure and functionality. We study optical properties of single III-V nitride nanowire radial heterostructures with measured spatial resolution of <20 nm using cathodoluminescence (CL) technique coupled with scanning transmission electron microscopy (STEM). Enhanced carrier recombination in nanowire quantum wells and reduced light emission from regions containing structural defects were directly observed. Using newly developed parallel-detection-mode CL-STEM, we show that optical properties can vary within a single nanowire heterostructure as a function of nanowire morphology.

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“…They behave as non-radiative recombination centers with energy levels in the forbidden gap and thus form trapping centers, act as charged scattering centers, 57 and provide a leakage current pathway. 58,59 Recent research has found that pure screw components, which are solely responsible for the leakage paths, are uncharged, while edge dislocations behave as negatively charged scatterers because the associated traps are filled with electrons. 60 The edge dislocation has a repulsive potential around its line, which will not deteriorate the device's performance in which electrons transport parallel to the edge.…”

Section: B Gan Growthmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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Optical analysis of dislocation‐related physical processes in GaN‐based epilayers

Cited by 14 publications

References 43 publications

Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Direct Correlation between Structural and Optical Properties of III−V Nitride Nanowire Heterostructures with Nanoscale Resolution

Review of using gallium nitride for ionizing radiation detection

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