Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

He, Xiaoli; Meng, Guowen; Zhu, Xiaoguang; Kong, Mingguang

doi:10.1007/s12274-009-9029-4

Cited by 18 publications

(18 citation statements)

References 27 publications

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“…The manipulation of these nanostructures is currently not as trivial as handling bulk materials, although the possibility of aligning an array of nanowires during growth is currently being investigated [6]- [11]. However, the accessible configurations will likely be restricted due to the fact that the angle between the substrate and the nanowires is dependent on the crystallographic growth direction [12], [13].…”

Section: Introductionmentioning

confidence: 99%

Effects of temperature on the ion-induced bending of germanium and silicon nanowires

Camara

Hanif

Tunes

et al. 2017

Mater. Res. Express

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Nanowires can be manipulated using an ion beam via a phenomenon known as ion-induced bending (IIB). While the mechanisms behind IIB are still the subject of debate, accumulation of point defects or amorphisation are often cited as possible driving mechanisms. Previous results in the literature on IIB of Ge and Si nanowires have shown that after irradiation the aligned nanowires are fully amorphous. Experiments were recently reported in which crystalline seeds were preserved in otherwise-amorphous ion-beam-bent Si nanowires which then facilitated solid-phase epitaxial growth (SPEG) during subsequent annealing. However, the ion-induced alignment of the nanowires was lost during the SPEG. In this work, in situ ion irradiations in a transmission electron microscope at 400°C and 500°C were performed on Ge and Si nanowires, respectively, to supress amorphisation and the build-up of point defects.Both the Ge and Si nanowires were found to bend during irradiation thus drawing into question the role of mechanisms based on damage accumulation under such conditions. These experiments demonstrate for the first time a simple way of realigning single-crystal Ge and Si nanowires via IIB whilst preserving their crystal structure.

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Section: Introductionmentioning

confidence: 99%

Effects of temperature on the ion-induced bending of germanium and silicon nanowires

Camara

Hanif

Tunes

et al. 2017

Mater. Res. Express

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“…The growth of GaN nanowires have been discussed in many previous studies [2,6,7]. The modulation of nanowires, for example, the preparation of a vertical array, creation of a heterostructure, and doping, has also been studied to exploit the potential of nanowires.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

Kim

Choi

2013

Nanoscale Res Lett

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We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and diameter of 1 to 10 μm and 100 nm, respectively. The vertical GaN/InGaN coaxial heterostructure nanowires (COHN) are then fabricated by the subsequent deposition of 2 nm of InxGa1-xN shell on the surface of GaN nanowires. The vertical GaN/InGaN longitudinal heterostructure nanowires (LOHN) are also fabricated by subsequent growth of an InGaN layer on the vertically aligned GaN nanowires using the catalyst. The photoluminescence from the COHN and LOHN indicates that the optical properties of GaN nanowires can be tuned by the formation of a coaxial or longitudinal InGaN layer. Our study demonstrates that the bi-metal catalysts are useful for growing vertical as well as heterostructure GaN nanowires. These vertically aligned GaN/InGaN heterostructure nanowires may be useful for the development of high-performance optoelectronic devices.

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“…[6-10]. Vertically aligned faceted GaN nanorods were produced by Deb et al using a catalyst-free template approach employing a silicon dioxide mask fabricated from the porous anodic alumina [11].…”

Section: Introductionmentioning

confidence: 99%

“…The devices can be also easily fabricated on the nanowire arrays with vertical alignment using the vertical electrical integration scheme, in which the efficiencies of the devices are strongly dependent on the orientation of nanowire crystals in the device [ 5 ]. Therefore, the epitaxial growth of vertically aligned nanowires has attracted a great deal of attention particularly on the growth techniques and the growth mechanism [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Nucleation control for the growth of vertically aligned GaN nanowires

Hou

Tang

et al. 2012

Nanoscale Res Lett

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Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN nanowires. In addition, the initial nucleation process is also found to play a key role in creating the high-quality homoepitaxy at the nanowire-substrate interface. By controlling the nucleation stage, the growth of highly aligned vertical GaN nanowire arrays can be achieved. The reasons for the observed effects are discussed.

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Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Cited by 18 publications

References 27 publications

Effects of temperature on the ion-induced bending of germanium and silicon nanowires

Effects of temperature on the ion-induced bending of germanium and silicon nanowires

Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts

Nucleation control for the growth of vertically aligned GaN nanowires

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