Review of using gallium nitride for ionizing radiation detection

Wang, Jinghui; Mulligan, Padhraic; Brillson, L. J.; Cao, Lei

doi:10.1063/1.4929913

Cited by 84 publications

(48 citation statements)

References 127 publications

(177 reference statements)

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“…The mean gradients determined by linear least square fitting show that a greater response to X-ray illumination was seen when operating the diodes at +0.5 V forward bias compared to −0.5 V reverse bias. This could be due to an increase in measured current due to traps being filled when operating the diodes in forward bias, and so additional charge carriers created by the X-ray photons were less likely to become trapped 2 10 11 .…”

Section: Experimental Method Results and Discussionmentioning

confidence: 99%

“…UV detection has been reported with hexagonal GaN 3 , and X-ray detection in current mode (rather than photon counting spectroscopic detection) has been demonstrated with hexagonal GaN detectors by various groups 7 8 9 10 11 . GaN’s wide bandgap, high electron mobility 11 and thermal stability 12 make it a material of interest for many detector applications, including future space missions to environments of high temperature and intense radiation that would be damaging to conventional semiconductor detectors.…”

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confidence: 99%

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X-ray detection with zinc-blende (cubic) GaN Schottky diodes

Gohil

Whale

Lioliou

et al. 2016

Sci Rep

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The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At −5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At −5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm−2 and (189.0 ± 0.2) mA cm−2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.

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Section: Experimental Method Results and Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

X-ray detection with zinc-blende (cubic) GaN Schottky diodes

Gohil

Whale

Lioliou

et al. 2016

Sci Rep

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“…22 Nitrides are an attractive alternative to oxide materials for carrier selective contacts due to their ability to withstand high temperature processing and plasma exposure. 23,24 Crucially, some nitride materials possess bandgaps wider than 2 eV, making them more transparent than a-Si. Materials such as the III-N family and their alloys, or the more recently developed family of Zn-IV-N 2 materials, are interesting candidates based on advantageous band alignment with crystalline silicon (c-Si) and the possibility for bandgap tuning by alloying.…”

Section: Introductionmentioning

confidence: 99%

Nitride layer screening as carrier-selective contacts for silicon heterojunction solar cells

Fioretti¹,

Boccard²,

Tamboli³

et al. 2018

AIP Conference Proceedings

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A three-architecture method for screening new materials' viability as carrier-selective contacts for silicon solar cells is presented. Test-structure solar cells were fabricated with a standard silicon heterojunction contact for the front side, and one of three treatments on the back: bare silicon, intrinsic amorphous silicon (i-aSi:H), or n-type amorphous silicon on an i-aSi:H passivation layer. Then, the candidate contact material of interest was deposited on the back of each test structure and the cells were finished with evaporated Al. By analysing the current-voltage characteristics of each type of architecture, the carrier selectivity and surface passivation quality of novel contact materials or material stacks can be rapidly screened. To demonstrate the utility of this method, we present a preliminary investigation of nitride compounds as electron-selective contacts in silicon solar cells, in particular zinc tin nitride (ZnSnN2), which is naturally n-type and has favourable band alignments with c-Si. ZnSnN2 was deposited by reactive sputtering as an electron contact on each test structure. No passivation was observed, but decent electron-selectivity was observed when in direct contact with the silicon wafer. When combined with intrinsic amorphous silicon, poor performances were obtained with poor selectivity and the occurrence of an S-shape, likely due to insufficient selectivity of the ZTN. Similar results were obtained for 2 nm and 20 nm thick layers, indicating selectivity did not result from the Al over-layer, but was in fact due to the ZTN itself. Overall, this work shows the three-architecture screening method is a useful tool for assessing novel contact materials for silicon heterojunction solar cells.

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“…Полупроводниковые гетероструктуры на основе нит-рида галлия (GaN), полученные эпитаксиальным ростом, широко используются в современных электронных и оптоэлектронных приборах [1][2][3][4][5][6][7][8]. Качество выращенного кристалла GaN сильно зависит от выбора подложки.…”

Section: Introductionunclassified

Динамика проникающих дислокаций в пористых гетероэпитаксиальных пленках GaN

Гуткин¹,

Ржавцев²

2017

Физика Твердого Тела

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С помощью компьютерного моделирования методом двумерной дискретной динамики дислокаций ис-следовано поведение проникающих дислокаций в пористых гетероэпитаксиальных пленках нитрида галлия (GaN). Использована расчетная схема, в которой поры моделировались сечениями цилиндрических полостей, упруго взаимодействующих с однонаправленными параллельными краевыми дислокациями, имитирующими проникающие дислокации. Получены временные зависимости координат и скоростей каждой дислокации из исследованных дислокационных ансамблей. Выполнена визуализации текущей структуры дислокационного ансамбля в виде карты расположения дислокаций в любой момент времени. Показано, что плотность возникающих дислокационных структур существенно зависит от отношения площади поперечного сечения поры к площади области моделирования. В частности, увеличение доли поверхности пор на поверхности слоя до 2% должно приводить к снижению конечной плотности проникающих дислокаций примерно в 1.5 раза, а увеличение этой доли до 15% -примерно в 4.5 раза.Работа выполнена при поддержке Министерства образования и науки Российской Федерации (грант № 3.3194.2017/РCh).

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Review of using gallium nitride for ionizing radiation detection

Cited by 84 publications

References 127 publications

X-ray detection with zinc-blende (cubic) GaN Schottky diodes

X-ray detection with zinc-blende (cubic) GaN Schottky diodes

Nitride layer screening as carrier-selective contacts for silicon heterojunction solar cells

Динамика проникающих дислокаций в пористых гетероэпитаксиальных пленках GaN

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