Direct Correlation between Structural and Optical Properties of III−V Nitride Nanowire Heterostructures with Nanoscale Resolution

Lim, Sang-Kyu; Brewster, Megan; Qian, Fang; Li, Yat; Lieber, Charles M.; Gradečak, Silvija

doi:10.1021/nl9025743

Cited by 95 publications

(89 citation statements)

References 26 publications

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“…Finally, in different types of heterostructures, transmission electron microscopy (TEM) based cathodoluminescence was used to characterize GaN/InGaN/AlGaN nanowire heterostructures. 30 This technique enabled the direct correlation between the structural quality and the carrier recombination characteristics in InGaN quantum wells. 30 In this work, we provide a study that demonstrates a direct correlation between the optical properties and structure at the atomic scale of GaAs nanowires formed by either pure wurtzite GaAs or a combination of various thicknesses of the zinc-blende and wurtzite phases.…”

Section: Introductionmentioning

confidence: 99%

“…30 This technique enabled the direct correlation between the structural quality and the carrier recombination characteristics in InGaN quantum wells. 30 In this work, we provide a study that demonstrates a direct correlation between the optical properties and structure at the atomic scale of GaAs nanowires formed by either pure wurtzite GaAs or a combination of various thicknesses of the zinc-blende and wurtzite phases. This enables us to elucidate the band alignment between the two crystalline phases and represents an important step toward structural band-gap engineering.…”

Section: Introductionmentioning

confidence: 99%

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Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

et al. 2011

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A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

et al. 2011

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“…Thus, it is now possible to perform TEM. It allows a higher spatial resolution and a direct observation of the luminescence change in-situ observation of luminescence change accompanied with microstructure change caused by electron-beam induced atomic displacement, for instance [32][33][34] . Moreover, with the addition of an in-column beam blanker synchronized with the optical detector, it is now available to use electron-beam in pulse mode, which allows performing decay profile measurements into an electron microscope 35 .…”

Section: Discussionmentioning

confidence: 99%

Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors

Cho

Dierre

Sekiguchi

et al. 2016

JoVE

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Nitride and oxynitride (Sialon) phosphors are good candidates for the ultraviolet and visible emission applications. High performance, good stability and flexibility of their emission properties can be achieved by controlling their composition and dopants. However, a lot of work is still required to improve their properties and to reduce the production cost. A possible approach is to correlate the luminescence properties of the Sialon particles with their local structural and chemical environment in order to optimize their growth parameters and find novel phosphors. For such a purpose, the low-voltage cathodoluminescence (CL) microscopy is a powerful technique. The use of electron as an excitation source allows detecting most of the luminescence centers, revealing their luminescence distribution spatially and in depth, directly comparing CL results with the other electron-based techniques, and investigating the stability of their luminescence properties under stress. Such advantages for phosphors characterization will be highlighted through examples of investigation on several Sialon phosphors by low-energy CL.

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“…On the contrary, CL techniques seem more satisfactory as their localized excitation enables the characterization of recombination mechanisms at the nanometer-scale. We believe it is mandatory to couple a TR-CL set-up, which provides a direct mapping of the internal quantum efficiency, with a CL set-up coupled with a scanning TEM, allowing correlation of the optical properties of a nanostructure with the structural ones [38]. More generally, this work is part of the current research on the peculiar emission properties of semiconductor nanostructures compared to thick layers.…”

Section: Discussionmentioning

confidence: 99%

Biexciton emission and crystalline quality of ZnO nano-objects

Corfdir¹,

Abid²,

Mouti³

et al. 2011

Nanotechnology

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The design of cost-effective standards for the quality of nano-objects is currently a key issue toward their massive use for optoelectronic applications. The observation by photoluminescence of narrow excitonic and biexcitonic emission lines in semiconductor nanowires is usually accepted as evidence for high structural quality. Here, we perform time-resolved cathodoluminescence experiments on isolated ZnO nanobelts grown by chemical vapor deposition. We observe narrow emission lines at low temperature, together with a clear biexciton line. Still, drastic alterations in both the CL intensity and lifetime are observed locally along the nano-object. We attribute these to non-radiative recombinations at edge dislocations, closing basal plane stacking faults, inhomogeneously distributed along the NB length. This leads us to the conclusion that the observation of narrow excitonic and biexcitonic emission lines is far from sufficient to grade the quality of a nano-object.

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Direct Correlation between Structural and Optical Properties of III−V Nitride Nanowire Heterostructures with Nanoscale Resolution

Cited by 95 publications

References 26 publications

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors

Biexciton emission and crystalline quality of ZnO nano-objects

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