One metric to rule them all: new k4 definition for photoresist characterization

Santaclara, Jara G.; Geh, Bernd; Yen, Anthony; Brunner, Timothy A.; Simone, Danilo De; Severi, Joren; Rispens, Gijsbert

doi:10.1117/12.2554493

Cited by 13 publications

(24 citation statements)

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“…This is done by appropriate normalization techniques and application of scaling rules for lithography metrics that have been described by several authors. 37,38,40 For example, it is known that the LWR decreases with increasing normalized image log-slope (NILS) and dose. Therefore, we normalize the variation of exposure conditions by application of appropriate scaling rules.…”

Section: Methodsmentioning

confidence: 99%

“…The generation of appropriate datasets for CA requires a preprocessing to provide an efficient sampling of the data space and to avoid defects in the simulated photoresist profiles. To focus our investigations on the impact of the photoresist parameters and to include knowledge from previously published work on the scaling of lithography metrics, 37,38 some of the computed lithography metrics are normalized by factors that describe the impact of imaging parameters.…”

Section: Relation Between Photoresist Parameters and The Lithography mentioning

confidence: 99%

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Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography

Belete

Bisschop

Welling

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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Organometallic photoresists are being pursued as an alternative photoresist material to push the current extreme ultraviolet lithography (EUVL) to the next generation of high-NA EUVL. In order to improve the photoresist performance, an understanding of the photoresist's response to different process conditions is required. In this endeavor, a stochastic development model is implemented, integrated into full photoresist process steps, and applied for photoresist performance investigations. The model is applied to Inpria-YA photoresist, which works mainly by the process of aggregation. Previously published modeling approaches for metal-organic photoresists assume that the development characteristics of these materials depend only on the size of the created oxo-clusters. In contrast to that, we propose a modeling approach that provides a more detailed description of the interaction among the developer, ligands, and oxo-bonds. Further, the calibration procedures conducted to extract the model parameters to match experimental data are discussed. The model approximated the experimental data with CD RMSE and LWR RMSE of 0.60 and 0.40 nm, respectively. We also investigated the impact of photoresist parameters on the process metrics, line width roughness (LWR), critical dimension (CD), doseto-size (DtS), and exposure latitude (EL) with the calibrated model. The investigation shows that details of the interaction of photoresist and developer, especially, the so-called development critical value, have a significant impact on the LWR and DtS. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Methodsmentioning

confidence: 99%

Section: Relation Between Photoresist Parameters and The Lithography mentioning

confidence: 99%

Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography

Belete

Bisschop

Welling

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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“…11 At that same conference, a revision to the k 4 formula was described. 12 In the revised formula, there is a new term e ffi ffi give different k 4 values. With the revised equation, k 4 is constant through pitch.…”

Section: Stochasticsmentioning

confidence: 99%

International Roadmap for Devices and Systems lithography roadmap

Neisser

2021

J. Micro/Nanopattern. Mats. Metro.

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Background: Planned improvements in semiconductor chip performance have historically driven improvements in lithography and this is expected to continue in the future. The International Roadmap for Devices and Systems roadmap helps the industry plan for the future. Aim:The 2021 lithography roadmap shows requirements, possible options, and challenges for the next 15 years.Results: Critical dimensions in logic chips are now small enough that stochastics, i.e., random variations in photon, molecules, and photoresist image forming processes, introduces random variations in sizes and stochastic-driven defects. As critical dimensions get smaller, stochastics becomes a bigger challenge. The roadmap projects that despite projected improvements in tools, photoresist, device design, and patterning processes, resist dose to print will still have to roughly triple over the next 10 years to maintain acceptable stochastics unless major process or chip design changes are made. This will raise patterning costs substantially. Other patterning options are under development but they also have challenges related to defects. Edge placement error (EPE) is also a challenge for future devices. Long-term, logic device requirements will drive stacked devices, and yield and process complexity will be key challenges.Conclusions: Logic devices will drive leading edge lithography. Improved extreme ultraviolet lithography is a leading candidate but other options are possible. Key short-term challenges are stochastics, EPE, and cost. Resist dose to print is expected to rise substantially as critical dimensions shrink unless substantial process innovation occurs. For the long term, the challenges will be yield and process complexity when logic devices switch to 3D scaling

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“…New metrics have been introduced in an attempt to disentangle and understand the different contributions of the exposure process. Although analytical developments have allowed estimating different contributions 4 , image blur as a convolution of tool and resist factors ultimately limits the physical understanding of each contribution. Developing a specific measurement method for the image blur is therefore of interest for further investigation of resists.…”

Section: Introductionmentioning

confidence: 99%

“…We developed a simplistic model in which the ideal contrast of sinusoidal aerial image of the EUV-IL and the measurement of resist performance through the pitch allows extraction of the resist blur. Characterization of resist parameters using LWR data is used to verify proof of concept by comparing k4 metric values to scanner results 4 . The method is then extended to EL (Exposure Latitude) study to isolate image blur as a single free-space parameter.…”

Section: Introductionmentioning

confidence: 99%

Image blur investigation using EUV-interference lithography

Allenet

Santaclara

Rispens

et al. 2020

Extreme Ultraviolet Lithography 2020

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As EUV lithography moves into mass production, photoresist development continues to be one of the most prominent challenges to reach higher resolutions. This work aims to address the resist performance limitations with regards to image blur. Feature quality is a result of the aerial image and the response function of the resist. The contrast of the aerial image is reduced by the exposure tool (optical aberrations and mechanical stability) and the resist (chemical mechanisms and development). Decoupling these two contributions would be highly valuable information to assist in resist development. Here, we investigate the through-pitch behavior of image contrast to determine and de-correlate the limitations of the resist and the exposure process. The method used here is based on the experimental analysis of the through-pitch behaviors of CD and LWR in dense lines/space patterns using EUV interference lithography.

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One metric to rule them all: new k4 definition for photoresist characterization

Cited by 13 publications

References 0 publications

Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography

Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography

International Roadmap for Devices and Systems lithography roadmap

Image blur investigation using EUV-interference lithography

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