Image blur investigation using EUV-interference lithography

Advances in Patterning Materials and Processes XXXIX

Chen

et al. 2022

The improvement of EUV photoresists is a key enabler for the deployment of High-NA EUV lithography and future technology nodes. Research in this field is supported by a joint research program between PSI and ASML. This program is dedicated to supporting the EUVL community with the development of materials by carrying out resist screening experiments with the EUV interference lithography tool at PSI, with an emphasis on resolution improvement towards reaching High-NA EUV scanner specifications. The tool enables high-resolution patterning without limitations in terms of chemical outgassing or contamination and is, therefore, an effective method for the testing of novel EUV photoresists. In this work, we consider the progress monitored in the second half of 2021. We describe the exposure tool as well as the updates made to the resist characterization metrology implemented at PSI. Resist performances are quantified with regards to resolution, linewidth roughness, and sensitivity. We show an overview of the current development status through a comparative study of different resist platforms. Recent results show chemically amplified resists (CAR) and non-CAR printing 12 nm and 11 nm lines/spaces features, respectively. Limitations of each platform are displayed and general progress and perspectives are discussed to lead the way to higher resolution results.

Section: Exposure Toolmentioning

confidence: 99%

EUV resist screening update: progress towards high-NA lithography

Advances in Patterning Materials and Processes XXXIX

Chen

et al. 2022

“…The EUV-IL tool represents a powerful alternative to EUV scanners for resist testing 9,[11][12][13][14] . The stripped-down optical setup allows an advantage in cost-effectiveness as well as some flexibility towards testing of materials without potential outgassing and contamination issues .…”

Section: Euv Interference Lithographymentioning

confidence: 99%

“…The Z-factor is limited to comparing performances at a given HP. Although this parameter is greatly simplified and does not provide in-depth depiction of performance through pitch, it is useful as a single metric for the first-order judgment of resist potential 8,9 .…”

Section: Introductionmentioning

confidence: 99%

Progress in EUV-interference lithography resist screening towards the deployment of high-NA lithography

Wang

Extreme Ultraviolet (EUV) Lithography XII

et al. 2021

Self Cite

The development of EUV resists is one of the major challenges for the deployment of high-NA EUV lithography , which is on the roadmap for high-volume manufacturing of future semiconductor technology nodes. Resist performance is admittedly governed by a resolution-roughness-sensitivity (RLS) tradeoff. This study reports on the EUV resist progress achieved during the last year in the framework of the resist screening program by PSI and ASM L. An extensive performance characterization of different resists was carried out using the XIL-II beamline EUV interference lithography (EUV-IL) tool at the Swiss Light Source (SLS). We present the upgraded screening metrology used in 2020 at PSI enabling increased confidence in results. We report material performance towards patterning lines/spaces features with respect to the key parameters of RLS: half-pitch (HP), dose-to-size (DtS), line-width-roughness (LWR), as well as Z-factor for overall performance consideration. General progress in EUV resist development is reviewed by considering several resist platforms available today from different vendors. Different molecular and chemically amplified resist materials are demonstrated as viable for 16 nm resolution technology nodes. One chemically-amplified resist vendor shows suitable materials for 13-nm-resolution technologies while exhibiting potential for further downscaling. We present different metal-oxide resists screening with resolutions down to 10 nm HP. We finally discuss the overall progress of materials achieved between 2019 and 2020 towards reaching high-NA.

“…In-house targets in dose-to-size (DTS), unbiased-linewidth roughness (LWRunb), and Z-factor = CD 3 •LWR 2 •DTS metrics are used for the quantitative assessment of the material performance. Although the Z-factor is a relatively crude metric 6,7 , it is used sufficiently as a single-parameter metric to evaluate the general performance of materials and allow relative comparison between platforms at a given feature size. Pattern transfer properties are not investigated here, however, platform-specific film thicknesses are considered to ensure further industrial process viability.…”

Section: Asml-psi Resist Screening Programmentioning

confidence: 99%

Progress in EUV resist screening by interference lithography for high-NA lithography

International Conference on Extreme Ultraviolet Lithography 2021

Yeh

et al. 2021

Self Cite

The introduction of novel photoresists is a critical enabler of future technology nodes, including the upcoming high-NA EUVL deployment. The development of EUV materials is investigated within the scope of a resist screening program between ASML and PSI. In this work, the EUV interference lithography tool at PSI is used to study materials performance in terms of the resolution-roughness-sensitivity tradeoff, with an emphasis on ultimate resolution. Here, we review the development status of different platforms by considering recent results obtained in the first half of 2021 (H1-2021). Patterning resolution of 11 nm half-pitch is achieved with both CAR and non-CAR materials, which indicates steady progress in the global resist development. Perspectives of this work are discussed towards enabling 8 nm half-pitch resolution solutions.