On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor

Schroder, D.K.; Nathanson, H.C.

doi:10.1016/0038-1101(70)90138-3

Cited by 119 publications

(23 citation statements)

References 7 publications

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“…This relationship was later modified [7, 81 by using a different generation rate expression. Schroder and Nathanson [9] showed that a modified analysis must be used when surface generation is a significant component of the total carrier generation and also that i t is possible to extract the surface generation velocity of a depleted surface, so. A method to determine the generation lifetime monitoring the change of MOS capacitance as a function of time when the gate bias is pulsed from inversion into depletion was proposed by Huang [lo].…”

Section: Introductionmentioning

confidence: 99%

The Pulsed MIS Capacitor. A Critical Review

Kang

Schroder

1985

phys. stat. sol. (a)

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Contents 1. bitroduction 2. Space-charge and quasi-neutral region generation 3. Theory of the non-equilibrium MOS capacitor 4 . Pulsed techniques 4.1 Zerbst method [4] 4.2 Heiman method [6] 4.3 Huang method [lo] 4.4 Calzolari current/capacitance transient method [14, 151 4.5 Trullemans and van de Wiele method [31] 4.6 Kano method [16] 4.7 Rabbani method [21] 5. Voltage sweep techniques 5.1 Pierret method [12, 131 5.2 Gorban method [17] 5.3 Taniguchi method [lS] 5.4 Lin method [22] 5.5 Kaplan method [20] 5.6 Tiwari method [23] 5.7 Kuper and Grimbergen method [33] 6. Charge measurement 6.1 Hofstein method [5] 6.2 Viswanathan method [37] 7 . Discussion References

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Section: Introductionmentioning

confidence: 99%

The Pulsed MIS Capacitor. A Critical Review

Kang

Schroder

1985

phys. stat. sol. (a)

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“…In this method [23] a deep depletion region (i.e. a non-steady state depletion region) is created by applying a suitable voltage pulse to the gate electrode and the return of the system to steady state is monitored by measuring the system capacitance as a function of time.…”

Section: Capacitance Vs Voltage and Generation Lifetime Measurementsmentioning

confidence: 99%

Palladium contamination in silicon

Polignano¹,

Mica²,

Ceresoli³

et al. 2015

Solid-State Electronics

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“…This recovery time is related both to the generation lifetime and to the surface recombination velocity [5] and is a useful indication of the generation lifetime. No significant oxide leakage was seen except at the highest powers (at which the substrate surface melted), in which case some capacitors were shorted and could not be tested.…”

Section: Mos Capacitance-timecharacteristicsmentioning

confidence: 99%

Effect of laser recrystallization of polysilicon on the underlying substrate

Kamins

Drowley

1982

IEEE Electron Device Lett.

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Although laser recrystallization of polysilicon into a large-grain structure degrades the lifetime in the underlying substrate, a subsequent heat treatment similar to that seen during transistor fabrication increases the lifetime to approximately the value in the regions not laser processed. KO electrical effects of laser damage to the underlying substrate are found in the transient behavior of MOS capacitors after furnace annealing or in the properties of p A n junction diodes. Since any damage to the substrate during laser processing is substantially eliminated by subsequent heat cycles, recrystallization is compatible with fabrication of high-quality devices in the substrate.

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On the separation of bulk and surface components of lifetime using the pulsed MOS capacitor

Cited by 119 publications

References 7 publications

The Pulsed MIS Capacitor. A Critical Review

The Pulsed MIS Capacitor. A Critical Review

Palladium contamination in silicon

Effect of laser recrystallization of polysilicon on the underlying substrate

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