Effect of laser recrystallization of polysilicon on the underlying substrate

Kamins, T. I.; Drowley, C.I.

doi:10.1109/edl.1982.25601

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…For proper utilization of the merits of RTA in designing new devices, it is highly desirable to have an accurate diffusion model to predict dopant motion during RTA. However, predictions of implanted dopant diffusion during RTA have not been very successful, especially for boron and phosphorus, due to the phenomenon of anomalous diffusion (3,(4)(5)(6)(7)(8)(9)(10). The anomalous behavior manifests during RTA with the enhanced diffusion of boron and phosphorus compared to the standard diffusion model, such as in SUPREM III (11).…”

Section: Discussionmentioning

confidence: 99%

Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer

Wel¹,

Buchner²,

Haberger³

et al. 1991

J. Electrochem. Soc.

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The substrate damage (SD) induced by laser recrysta]lization of a polysilicon layer insulated from a Si substrate by a SiO2 layer is discussed. The SD can be detected by simple methods which offer the advantage of rapidly available results. Measures to prevent substrate damage are presented and discussed. Their effectiveness is proved by the fact that after argon laser recrystallization of a SOI layer substrate, NMOS devices showed no change in their characteristics.

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Section: Discussionmentioning

confidence: 99%

Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer

Wel¹,

Buchner²,

Haberger³

et al. 1991

J. Electrochem. Soc.

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“…A great deal is known about the structural and electrical properties of laser-recrystallized polysilicon films [1,21. Laser recrystallization has been successfully used to achieve three-dimensional integration of MOSFETs [3] and diodes [4]. Related work has investigated degradation of carrier lifetimes in Si substrates after pulsed laser irradiation of overlaying polysilicon films [5,6]. Recent advanced in VLSI processing have used pulsed lasers for link blowing to achieve programmable redundancy in DRAMS [7].…”

Section: Introductionmentioning

confidence: 99%

<title>Transient laser-induced surface deformation of Si-based multilayer structures</title>

Chun

Walser

et al. 1993

SPIE Proceedings

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Transient thermal expansion, heat generation and conduction, nonlinear laser heating and subsequent melting behaviors of polysificon/oxide/silicon wafer 'sandwich' structures have been investigated via a laser pump-probe technique. Laser pmcessing, damage, and characterization of bulk semiconductor materials has been extensively investigated. However, less is known about the mechanisms of laser-induced damage for multilayer structures such as CCD imaging arrays. In order to develop damage resistant sensors and better isolation for sensors used in laser environments, it is necessary to understand the processes contributing to the laser hardness and damage of these sensors. We designed experiments to measure the transient thermomechanical and laser-damage characteristics of multilayer systems that resemble CCD devices. The final objective was to gain some insight into the dominant mechanisms responsible for laser-induced degradation in CCD imaging arrays and devices of similar structures. Positive identification of a precursor event signaling the onset of catastrophic damage and identification of the weakest link elements on the sensor array will be essential for making design or processing modifications to improve hardness. It is our goal in this paper to contribute to the above objectives by describing investigations of laser-induced damage to silicon-based multilayer structures. We performed single and multiple shot experiments to obtain morphological damage thresholds for a sample set of various isolation oxide and polysilicon layer thickness. The transient photothermal deflection (TPD) technique that we employed consisted of a 10 ns pulsed Nd: YAG pump laser source at 1064 nm wavelength with a 10 Hz repetition rate. A cw HeNe laser was to probe the localized, timedependent slope change of the illuminated surface. The deflection of the reflected probe beam was detected by a fast bicell photodiode with temporal resolution of 20 ns. The deformation signals were recorded by a digital camera system and highspeed oscilloscope. The waveforms were later analyzed to extract the peak angular deflection and the vertical displacement based on the geometry of the Gaussian irradiation profile. Vertical displacement down to a few nm could be detected. Measured displacement and surface temperature were then compared to computer simulations at different fluence levels for bulk silicon. They were found to be in excellent agreement to each other. In addition, single shot experiments were performed to obtain their respective damage onsets for various Si-based multilayer samples. Results indicated that the top polysilicon layer received the major portion of the photon energy deposited before substantial heat was conducted into the Si substrate. And it had a lower melt onset than bulk silicon due to strong nonlinear absorption. Laser-induced damage to polysilicon layer was also related to film microstructures and degree of thermal isolation which depended on the oxide thickness. Measurement of peak surface deformation at subthresho...

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Laser Fabrication of Integrated Circuits

Herman

1984

Springer Series in Chemical Physics

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Effect of laser recrystallization of polysilicon on the underlying substrate

Cited by 7 publications

References 6 publications

Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer

Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer

<title>Transient laser-induced surface deformation of Si-based multilayer structures</title>

Laser Fabrication of Integrated Circuits

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